V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
Dclink
=
=
=
=
=
=
4500
600
3×10
3
1.9
3.5
2800
V
A
A
V
mW
V
Asymmetric Gate turn-off
Thyristor
5SGA 06D4502
PRELIMINARY
Doc. No. 5SYA1236-00 Jun. 04
·
Patented free-floating silicon technology
·
Low on-state and switching losses
·
Central gate electrode
·
Industry standard housing
·
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Permanent DC voltage for
100 FIT failure rate
Characteristic values
Symbol Conditions
V
DRM
V
RRM
V
Dclink
Ambient cosmic radiation at sea level
in open air.
V
GR
³
2 V
min
typ
max
4500
17
2800
Unit
V
V
V
Parameter
Repetitive peak off-state
current
Repetitive peak reverse
current
Symbol Conditions
I
DRM
I
RRM
V
D
= V
DRM
, V
GR
³
2 V
V
R
= V
RRM
, R
GK
=
¥ W
min
typ
max
20
50
Unit
mA
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
H
m
D
s
Anode to Gate
± 0.1 mm
min
10
min
typ
11
typ
34
26
max
12
max
Unit
kN
Unit
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
0.25
30
kg
mm
mm
Air strike distance
D
a
Anode to Gate
20.5
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SGA 06D4502
GTO Data
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
T(AV)M
Half sine wave, T
C
= 85 °C
min
typ
max
210
330
Unit
A
A
3
Max. RMS on-state current I
T(RMS)
I
TSM
I
2
t
I
TSM
I
2
t
I
TSM
I
2
t
Symbol Conditions
V
T
V
(T0)
r
T
I
H
1)
t
p
= 8.3 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
t
p
= 10 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
t
p
= 1 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
3.1×10
40×10
3×10
A
A
2
s
A
A
2
s
A
A
2
s
Unit
V
V
mW
A
3
3
45×10
6×10
3
3
18×10
min
typ
max
4
1.9
3.5
20
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
I
T
= 600 A, T
vj
= 125°C
T
vj
= 125°C
I
T
= 200...600 A
T
vj
= 25°C
Turn-on switching
Maximum rated values
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Min. on-time
Characteristic values
Symbol Conditions
di
T
/dt
cr
di
T
/dt
cr
t
on
Symbol Conditions
t
d
t
r
E
on
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
I
T
= 600 A, di/dt = 200 A/µs,
I
GM
= 20 A, di
G
/dt = 20 A/µs,
C
S
= 1 µF, R
S
= 10
W
T
vj
= 125°C,
I
T
= 600 A, I
GM
= 20 A,
di
G
/dt = 20 A/µs
f = 200 Hz
f = 1 Hz
min
typ
max
400
600
Unit
A/µs
A/µs
µs
80
min
typ
max
1.5
3
0.8
Parameter
Turn-on delay time
Rise time
Turn-on energy per pulse
Unit
µs
µs
J
Turn-off switching
Maximum rated values
1)
Parameter
Max. controllable turn-off
current
Spike Voltage
Min. off-time
Characteristic values
Symbol Conditions
I
TGQM
V
DSP
t
off
Symbol Conditions
t
S
t
f
E
off
I
GQM
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
V
DM
£
V
DRM
, di
GQ
/dt = 20 A/µs,
I
TGQ
= I
TGQM
,
R
S
= 10
W,
C
S
= 1 µF, L
S
= 0.15 µH
RCD Snubber
V
DM
£
V
DRM
, V
D
= 0.5 V
DRM
di
GQ
/dt = 20 A/µs, C
S
= 1 µF,
L
S
£
0.15 µH, RCD Snubber
min
typ
max
600
£
650
Unit
A
V
µs
80
min
typ
max
15
5
1.9
300
Parameter
Storage time
Fall time
Turn-on energy per pulse
Peak turn-off gate current
Unit
µs
µs
J
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1236-00 Jun. 04
page 2 of 5
5SGA 06D4502
Gate
Maximum rated values
1)
Parameter
Repetitive peak reverse
voltage
Repetitive peak reverse
current
Characteristic values
Symbol Conditions
V
GRM
I
GRM
V
GR
= V
GRM
min
typ
max
17
20
Unit
V
mA
Parameter
Gate trigger voltage
Gate trigger current
Symbol Conditions
V
GT
I
GT
1)
min
typ
1
2
max
Unit
V
A
T
vj
= 25°C,
V
D
= 24 V, R
A
= 0.1
W
Thermal
Maximum rated values
Parameter
Junction operating temperature
Storage temperature range
Characteristic values
Symbol
T
vj
T
stg
Symbol
R
th(jc)
R
th(jc)A
R
th(jc)C
Conditions
min
0
0
typ
max
125
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Parameter
Thermal resistance junction to case
Conditions
Double side cooled
Anode side cooled
Cathode side cooled
Single side cooled
Double side cooled
min
typ
max
50
85
122
16
8
Thermal resistance case to heatsink
(Double side cooled)
R
th(ch)
R
th(ch)
Analytical function for transient thermal
impedance:
Z
thJC
(t) =
å
R
i
(1 - e
-t/
t
i
)
i
=
1
i
R
i
(K/kW)
t
i
(s)
1
15.000
0.4610
2
5.200
0.0950
3
7.500
0.0120
4
0.100
0.0010
Fig. 1
Transient thermal impedance, junction to
case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1236-00 Jun. 04
page 3 of 5
5SGA 06D4502
Fig. 2
General current and voltage waveforms with GTO-specific symbols.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1236-00 Jun. 04
page 4 of 5
5SGA 06D4502
Fig. 3
Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage
V
R
may exceed the rate value V
RRM
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation :
V
GR
= 10…15 V.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1236-00 Jun. 04
stm32/stm8
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