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5SDF14H4505

Description
Fast Recovery Diode
CategoryDiscrete semiconductor    diode   
File Size237KB,7 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SDF14H4505 Overview

Fast Recovery Diode

5SDF14H4505 Parametric

Parameter NameAttribute value
package instructionO-CEDB-N2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current60000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current1400 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage4500 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
V
RRM
I
F(AV)M
I
FSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
4500
1400
25×10
3
1.2
0.32
2200
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 14H4505
Doc. No. 5SYA1110-02 Oct. 06
Patented free-floating silicon technology
Low on-state and switching losses
Optimized for use as freewheeling diode in GTO
converters with low DC-link voltages
Industry standard housing
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Symbol Conditions
V
RRM
V
DC-link
f = 50 Hz, t
p
= 10ms, T
vj
= 125°C, Note 1
Ambient cosmic radiation at sea level in open
air. (100% Duty)
min
typ
Value
4500
2200
Unit
V
V
Parameter
Repetitive peak reverse current
Symbol Conditions
I
RRM
V
R
= V
RRM
, T
vj
= 125°C
max
50
Unit
mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below 0 °C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
m
a
a
Device unclamped
Device clamped
min
36
typ
40
max
44
50
200
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H
D
S
D
a
min
25.9
30
20
typ
max
0.83
26.4
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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