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5SGA20H2501

Description
Gate turn-off Thyristor
CategoryAnalog mixed-signal IC    Trigger device   
File Size311KB,9 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SGA20H2501 Overview

Gate turn-off Thyristor

5SGA20H2501 Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CXDB-X4
Reach Compliance Codecompli
ConfigurationSINGLE
Maximum DC gate trigger current2500 mA
JESD-30 codeO-CXDB-X4
On-state non-repetitive peak current16 A
Number of components1
Number of terminals4
Maximum on-state current830000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current1300 A
Off-state repetitive peak voltage2500 V
Repeated peak reverse voltage17 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeGATE TURN-OFF SCR
Base Number Matches1
V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
DClin
=
=
=
=
=
=
2500
2000
16
1.66
0.57
1400
V
A
kA
V
mW
V
Gate turn-off Thyristor
5SGA 20H2501
Doc. No. 5SYA1205-01 Jun. 04
·
Patented free-floating silicon technology
·
Low on-state and switching losses
·
Annular gate electrode
·
Industry standard housing
·
Cosmic radiation withstand rating
Blocking
V
DRM
V
RRM
I
DRM
I
RRM
V
DClink
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
Permanent DC voltage for 100
FIT failure rate
£
£
2500 V
17 V
30 mA
50 mA
1400 V
V
D
= V
DRM
V
R
= V
RRM
V
GR
³
2V
R
GK
=
¥
V
GR
³
2V
-40
£
T
j
£
125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data
(see Fig. 19)
F
m
A
Mounting force
Acceleration:
Device unclamped
Device clamped
M
D
S
D
a
Weight
Surface creepage distance
Air strike distance
³
³
50 m/s
2
200 m/s
2
0.8 kg
22 mm
13 mm
min.
max.
17 kN
24 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
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