V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
DClink
= 2500 V
= 3000 A
=
30 kA
=
1.5 V
= 0.33 mΩ
= 1400 V
Gate turn-off Thyristor
5SGA 30J2501
Doc. No. 5SYA1213-02 Jan. 05
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Annular gate electrode
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
V
DRM
V
RRM
I
DRM
I
RRM
V
DClink
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
Permanent DC voltage for 100
FIT failure rate
≤
≤
2500 V
17 V
100 mA
50 mA
1400 V
V
D
= V
DRM
V
R
= V
RRM
V
GR
≥
2V
R
GK
=
∞
V
GR
≥
2V
Ambient cosmic radiation at sea level in
open air.
Mechanical data
(see Fig. 3)
F
m
A
Mounting force
Acceleration:
Device unclamped
Device clamped
M
D
S
D
a
Weight
Surface creepage distance
Air strike distance
≥
≥
50 m/s
2
200 m/s
2
1.3 kg
33 mm
15 mm
min.
max.
36 kN
44 kN
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SGA 30J2501
GTO Data
On-state
I
TAVM
I
TRMS
I
TSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
1300 A
2040 A
30 kA
51 kA
4.5x10
6
A
2
s
1.3x10
6
A
2
s
V
T
V
T0
r
T
I
H
On-state voltage
Threshold voltage
Slope resistance
Holding current
2.5 V
1.5 V
0.33 mΩ
100 A
T
j
= 25 °C
t
P
=
t
P
=
t
P
=
t
P
=
I
T
=
I
T
=
10 ms
1 ms
10 ms
1 ms
3000 A
400 - 4000 A
T
j
=
125 °C
T
j
=
125°C
Half sine wave, T
C
= 85 °C
After surge:
V
D
= V
R
= 0V
I
2
t
Gate
V
GT
I
GT
V
GRM
I
GRM
Gate trigger voltage
Gate trigger current
Repetitive peak reverse voltage
Repetitive peak reverse current
1.2 V
4 A
17 V
50 mA
V
GR
= V
GRM
V
D
R
A
= 24 V
= 0.1
Ω
T
j
=
25 °C
Turn-on switching
di/dt
crit
Max. rate of rise of on-state
current
t
d
t
r
t
on(min)
E
on
Delay time
Rise time
Min. on-time
Turn-on energy per pulse
500 A/µs
1000 A/µs
2.5 µs
5 µs
100 µs
2 Ws
f = 200Hz
f = 1Hz
V
D
=
I
T
=
I
T
= 3000 A,
T
j
= 125 °C
I
GM
= 30 A, di
G
dt = 20 A/µs
0.5 V
DRM
T
j
3000 A
30 A
5 µF
=
125 °C
300 A/µs
20 A/µs
5
Ω
di/dt =
di
G
/dt =
R
S
=
I
GM
=
C
S
=
Turn-off switching
I
TGQM
Max controllable turn-off
current
Storage time
Fall time
Min. off-time
Turn-off energy per pulse
Peak turn-off gate current
3000 A
V
DM
= V
DRM
C
S
25 µs
3 µs
100 µs
4.7 Ws
1000 A
V
D
T
j
= 5 µF
di
GQ
/dt =
L
S
≤
=
40 A/µs
0.3 µH
V
DRM
40 A/µs
t
s
t
f
t
off(min)
E
off
I
GQM
= ½ V
DRM
V
DM
=
125 °C di
GQ
/dt =
I
TGQ
= I
TGQM
C
S
L
S
=
≤
5 µF R
S
0.3 µH
=
5
Ω
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05
page 2 of 6
5SGA 30J2501
Thermal
T
j
R
thJC
Storage and operating
junction temperature range
Thermal resistance
junction to case
R
thCH
Thermal resistance case to
heat sink
Analytical function for transient thermal
impedance:
22 K/kW
27 K/kW
12 K/kW
6 K/kW
3 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
-40...125°C
Z
thJC
(t) =
∑
4
i
1
5.4
1.2
2
4.5
0.17
3
1.7
0.01
4
0.4
0.001
R
i
(1 - e
- t /
τ
i
)
R
I
(K/kW)
τ
i
(s)
i
=
1
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05
page 3 of 6
5SGA 30J2501
Fig. 1
On-state characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05
page 4 of 6
5SGA 30J2501
Fig. 2
General current and voltage waveforms with GTO-specific symbols
Fig. 3
Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
page 5 of 6
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05
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