AO3400A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO3400A is
Pb-free (meets ROHS & Sony 259 specifications).
Features
Features
V
DS
(V) ==30V
V
DS
(V) 30V
I
DD
==11A (V
GS
==10V)
I 5.7A (V
GS
10V)
R
DS(ON)
< 26.5mΩ (V
GS
= 10V)
R
DS(ON)
< 14.5mΩ (V
GS
= 10V)
R
DS(ON)
<<32mΩ (V
GS
==4.5V)
R
DS(ON)
18mΩ (V
GS
4.5V)
R
DS(ON)
< 48mΩ (V
GS
= 2.5V)
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
Maximum
30
±12
5.7
4.7
25
1.4
0.9
-55 to 150
Units
V
V
A
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3400A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250uA, V
GS
=0V
V
DS
=30V, V
GS
=0V
T
J
=125°C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=5.7A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=3A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=5V, I
D
=5.7A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
0.7
25
22
31
25.4
34
26
0.72
1.0
2.0
900
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
88
65
0.95
10
V
GS
=4.5V, V
DS
=15V, I
D
=5.7A
1.8
3.75
3.2
V
GS
=10V, V
DS
=15V, R
L
=2.6Ω,
R
GEN
=3Ω
IF=5.7A, dI/dt=100A/us
3.5
21.5
2.7
16.8
8
20
1.5
13
1100
26.5
38
32
48
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
mΩ
1
Min
30
1
5
100
1.5
Typ
Max
Units
V
uA
nA
V
A
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/us
A: The value of R
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
8.5
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
0.0
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
40
A
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
#DIV/0!
curve provides a single pulse rating.
F: The current rating is based on the t
≤
10s thermal resistance rating.
Rev0: Apr. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
I
D
(A)
20
15
10
5
0
0
1
2
V
GS
=2V
2.5V
I
D
(A)
10V
4.5V
3V
20
V
DS
=5V
16
12
0.7
8
125°C
V
GS
=10V, I
D
=8.5A
V
GS
=4.5V, I
D
=8.5A
5
25
1
1 uA
5
100 nA
1.5
25°C
24
36.0
29.0
4
20
30.0
23
34.5
0
0.5
1
1.5
V
GS
=2.5V, I
D
=5A
V
DS
=5V, I
D
=11A
3
4
0
45
2
2.5
Maximum
1: On-Region Characteristics
Current
Figure
Body-Diode Continuous
60
50
R
DS(ON)
(m
Ω
)
45
40
35
30
25
20
15
0
5
V
GS
=4.5V
Normalized On-Resistance
55
1.8
V
DS
(Volts)
V
GS
(Volts)
Figure 2: Transfer Characteristics
26
0.72
1
4.5
3
1.5
900
1100
88
65
I
D
=5A
0.95
=4.5V
1.5
V
GS
10
1.8
3.75
3.2
3.5
21.5
2.7
50 75
16.8
V
GS
=10V
I
D
=5.7A
Q
g
V
GS
=2.5V
V
GS
=10V, V
DS
=15V, I
D
=8.5A
1.2
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω, R
GEN
=3Ω
0.9
V
GS
=10V
10
0.6
15
20
-50
-25
0
25
I
D
(A)
I
F
=8.5A, dI/dt=100A/µs
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
I
D
=5.7A
50
R
DS(ON)
(m
Ω
)
40
I
F
=8.5A, dI/dt=100A/µs
100 125 150 175
Temperature (°C)
8
Figure 4: On-Resistance vs. Junction
Temperature
8.5
1.0E+01
#DIV/0!
I
S
(A)
125°C
1.0E+00
40
1.0E-01
1.0E-02
0.0
125°C
A
1.0E-03
30
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-04
COMPONENTS IN LIFE SUPPORT DEVICES25°CSYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OR
20
1.0E-05
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
0
2
4
6
8
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
V
DS
=15V
I
D
=5.7A
Capacitance (pF)
1500
1200
C
iss
900
0.7
600
300
0
0
V
GS
=10V, I
D
=8.5A
1
25
1
20
30
23
C
oss
34.5
1 uA
5
100 nA
1.5
24
36
29
45
30
V
GS
=4.5V, I
D
=8.5A
0
0
2
4
6
C
rss
V
GS
=2.5V, I
D
=5A
V
DS
8
=5V, I
D
10
=11A
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Maximum Body-Diode Continuous Current
100.00
R
DS(ON)
limited
10µs
30
Power (W)
100µs
1ms
26
15
20
25
V
DS
0.72
(Volts)
1
Figure 8: Capacitance Characteristics
4.5
5
10
40
10.00
I
D
(Amps)
900
88
65
0.95
1100
T
J(Max)
=150°C
1.5
T
A
=25°C
Q
g
1.00
V
GS
=10V, V
DS
=15V, I
D
=8.5A
20
10ms
0.10
T
J(Max)
=150°C
T
A
=25°C
0.1
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω, R
GEN
=3Ω
DC
100ms
10
10s
0
0.001
0.01
0.01
1
10
100
I
F
=8.5A, dI/dt=100A/µs
V
DS
(Volts)
0.01
F
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
I =8.5A, dI/dt=100A/µs
Figure 10: Single Pulse
8
Power Rating Junction-to-
Ambient (Note E)
10
1.8
3.75
3.2
3.5
21.5
2.7
0.1
1
16.8
(s)
Pulse Width
10
100
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
8.5
0.0
In descending order
40
A
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
#DIV/0!
1
P
D
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
0.1
T
on
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Single Pulse
T
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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