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Datasheet> All Categories > Discrete semiconductor> diode> 5SLX12K1711
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5SLX12K1711

Description
Fast-Diode Die
CategoryDiscrete semiconductor    diode   
File Size51KB，3 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SLX12K1711 Overview

Fast-Diode Die

5SLX12K1711 Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instruction11.90 X 11.90 MM, DIE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
applicationFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeS-XXUC-N2
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current150 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1700 V
Maximum reverse recovery time0.46 µs
surface mountYES
Terminal formNO LEAD
Terminal locationUNSPECIFIED
Base Number Matches1

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Download Datasheet
V
RRM
=
I
F
=
1700 V
150 A
Fast-Diode Die
5SLX 12K1711
Die size: 11.9 x 11.9 mm
Doc. No. 5SYA1662-01 Feb. 05
•
•
•
•
Fast and soft reverse-recovery
Low losses
High SOA
Passivation: SIPOS Nitride plus Polyimide
Maximum rated values
Parameter
1)
Symbol
V
RRM
I
F
I
FRM
T
vj
Conditions
min
max
1700
150
Unit
V
A
A
°C
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
1)
Limited by T
vjmax
-40
300
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
Parameter
Continuous forward voltage
Continuous reverse current
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
2)
2)
Symbol
V
F
I
R
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 150 A
V
R
= 1700 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
I
F
= 150 A,
V
R
= 900 V,
di/dt = 800 A/µs,
L
σ
= 800 nH,
Inductive load,
Switch:
2x 5SMX12K1701
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1.4
typ
1.65
1.7
max
2.0
100
Unit
V
V
µA
mA
A
A
µC
µC
ns
ns
mJ
mJ
3
118
146
43
73
460
660
32
53
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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