V
DRM
I
TGQM
I
TSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
4500
4000
32×10
3
1.4
0.325
2800
V
A
A
V
mΩ
V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 35L4510
Doc. No. 5SYA1232-02 June 07
•
High snubberless turn-off rating
•
Optimized for medium frequency (<1 kHz) and
wide temperature range
•
High reliability
•
High electromagnetic immunity
•
Simple control interface with status feedback
•
AC or DC supply voltage
•
Contact factory for series connection
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Rep. peak off-state voltage V
DRM
Gate Unit energized
Permanent DC voltage for V
DC-link
100 FIT failure rate of GCT
Reverse voltage
Characteristic values
min
typ
max
4500
2800
17
10
Unit
V
V
V
V
Unit
mA
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
IGCT in
off-state
on-state
V
RRM
Parameter
Symbol Conditions
Rep. peak off-state current I
DRM
V
D
= V
DRM
, Gate Unit energized
min
typ
max
50
Mechanical data
(see Fig. 11, 12)
1)
Maximum rated values
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
± 0.1 mm
H
m
D
s
D
a
l
h
Anode to Gate
Anode to Gate
± 1.0 mm
± 1.0 mm
min
36
min
25.3
33
10
typ
40
typ
85
max
44
max
25.8
2.9
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
Length
Height
439
40
173
mm
mm
mm
Width IGCT
w
± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHY 35L4510
GCT Data
On-state
(see Fig.
1)
3, 4, 5, 6, 14, 15)
Maximum rated values
Parameter
Max. average on-state
current
Symbol Conditions
I
T(AV)M
Half sine wave, T
C
= 85 °C,
Double side cooled
min
typ
max
1700
2670
Unit
A
A
3
Max. RMS on-state current I
T(RMS)
Max. peak non-repetitive
surge on-state current
Limiting load integral
Max. peak non-repetitive
surge on-state current
Limiting load integral
Stray inductance between
GCT and antiparallel diode
Critical rate of rise of on-
state current
Characteristic values
I
TSM
I
2
t
I
TSM
I
2
t
L
D
di
T
/dt
cr
t
p
= 10 ms, Tj = 125 °C, sine wave
after surge: V
D
= V
R
= 0 V
t
p
= 30 ms, Tj = 125 °C, sine wave
after surge: V
D
= V
R
= 0 V
Only relevant for applications with
antiparallel diode to the IGCT
For higher di
T
/dt and current lower
than 100 A an external retrigger puls
is required.
min
typ
2.35
32×10
A
6
5.12×10
21×10
3
A
2
s
A
6.62×10
300
200
6
A
2
s
nH
A/µs
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
V
T
I
T
= 4000 A, T
j
= 125 °C
V
(T0)
r
T
T
j
= 125 °C
I
T
= 1000...4000 A
max
2.7
1.4
0.325
Unit
V
V
mΩ
Turn-on switching
1)
Maximum rated values
(see Fig. 14, 15)
Symbol Conditions
di
T
/dt
cr
f = 0..500 Hz, T
j
= 125 °C,
V
D
= 2800 V, I
TM
≤
4000 A
Symbol Conditions
V
D
= 2800 V, T
j
= 125 °C
t
don
I
T
= 4000 A, di/dt = V
D
/ L
i
t
don SF
L
i
= 5 µH
C
CL
= 10 µF, L
CL
= 0.3 µH
t
r
E
on
min
typ
max
1000
Unit
A/µs
Parameter
Critical rate of rise of on-
state current
Characteristic values
Parameter
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
Maximum rated values
min
typ
max
3.5
7
1
1.5
Unit
µs
µs
µs
J
Turn-off switching
(see Fig. 7, 8, 10, 14, 15)
1)
Parameter
Max. controllable turn-off
current
Characteristic values
Symbol Conditions
I
TGQM
V
DM
≤
V
DRM
, T
j
= 125°C,
V
D
= 2800 V, R
S
= 0.65
Ω,
C
CL
= 10 µF, L
CL
≤
0.3 µH
Symbol Conditions
t
doff
V
D
= 2800 V, T
j
= 125 °C
t
doff SF
V
DM
≤
V
DRM
, R
S
= 0.65
Ω
I
TGQ
= 4000 A, L
i
= 5 µH
C
CL
= 10 µF, L
CL
= 0.3 µH
E
off
min
typ
max
4000
Unit
A
Parameter
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
min
typ
max
7
7
Unit
µs
µs
J
19.5
22
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
page 2 of 9
5SHY 35L4510
Gate Unit Data
Maximum rated values
Power supply
(see Fig. 2, 9, 10, 12, 13)
1)
Parameter
Gate Unit voltage
(Connector X1)
Min. current needed to power
up the Gate Unit
Characteristic values
Symbol Conditions
V
GIN,RMS
AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
galvanic isolation to power circuit.
I
GIN Min
Rectified average current
see application note 5SYA 2031
min
28
typ
max
40
Unit
V
2.1
100
min
typ
max
8
A
W
Unit
A
Gate Unit power consumption P
GIN Max
Parameter
Internal current limitation
Symbol Conditions
I
GIN Max
Rectified average current limited by
the Gate Unit
Maximum rated values
Optical control
1)
input/output
2)
Parameter
Min. on-time
Min. off-time
Characteristic values
Symbol Conditions
t
on
t
off
Symbol Conditions
P
on CS
CS: Command signal
P
off CS
SF: Status feedback
Valid for 1mm plastic optical fiber
P
on SF
min
40
40
min
-15
-19
typ
max
Unit
µs
µs
Parameter
Optical input power
Optical noise power
Optical output power
Optical noise power
Pulse width threshold
External retrigger pulse width
typ
max
-1
-45
-1
-50
400
Unit
dBm
dBm
dBm
dBm
ns
ns
P
off SF
t
retrig
(POF)
t
GLITCH
Max. pulse width without response
600
1100
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors
2)
(see Fig. 11, 12, 13)
Parameter
Gate Unit power connector
LWL receiver for command signal
LWL transmitter for status feedback
Symbol Description
3)
X1
AMP: MTA-156, Part Number 641210-5
CS
SF
Agilent, Type HFBR-2528
Agilent, Type HFBR-1528
4)
4)
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Agilent Technologies, www.semiconductor.agilent.com
Visual feedback
(see Fig. 13)
Parameter
Gate OFF
Gate ON
Fault
Power supply voltage OK
Symbol Description
LED1 "Light" when GCT is off
LED2
LED3
LED4
"Light" when gate-current is flowing
"Light" when not ready / Failure
"Light" when power supply is within specified range
Color
(green)
(yellow)
(red)
(green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
page 3 of 9
5SHY 35L4510
Thermal
Maximum rated values
1)
Parameter
Junction operating temperature
Storage temperature range
Ambient operational temperature
Characteristic values
Symbol
T
vj
T
stg
T
a
Conditions
min
-40
-40
-40
typ
max
125
60
50
Unit
°C
°C
°C
Unit
K/kW
K/kW
Parameter
Symbol
Thermal resistance junction-to-case
R
th(j-c)
of GCT
Thermal resistance case-to-
heatsink of GCT
R
th(c-h)
Conditions
Double side cooled
Double side cooled
min
typ
max
8.5
3
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
i
(1 - e
i
=
1
i
R
i
(K/kW)
τ
i
(s)
1
5.562
0.5119
2
1.527
0.0896
3
0.868
0.0091
n
- t/
τ
i
)
4
0.545
0.0024
Fig. 1
Transient thermal impedance (junction-to-
case) vs. time (max. values)
Max. Turn-off current for Lifetime operation
•
•
•
calculated lifetime of on-board capacitors
20 years
with slightly forced air cooling (air velocity
> 0.5 m/s)
strong air cooling allows for increased
ambient temperature
Fig. 2
Max. turn-off current vs. frequency for lifetime
operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
page 4 of 9
5SHY 35L4510
Max. on-state characteristic model:
Max. on-state characteristic model:
V
T25
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
A
25
-3
622.7×10
Valid for i
T
= 300 – 30000 A
B
25
C
25
-6
-3
163.4×10
141.1×10
D
25
0.0
V
T125
=
A
Tvj
+
B
Tvj
⋅
I
T
+
C
Tvj
⋅
ln(
I
T
+
1)
+
D
Tvj
⋅
I
T
Valid for i
T
= 300 – 30000 A
A
125
-3
-16.0×10
B
125
-6
226.6×10
C
125
-3
218.4×10
D
125
0.0
Fig. 3
GCT on-state voltage characteristics
Fig. 4
GCT on-state voltage characteristics
Fig. 5
Surge on-state current vs. pulse length, half-
sine wave
Fig. 6
Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
page 5 of 9
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