V
RRM
=
I
F
=
3300 V
100 A
Fast-Diode Die
5SLX 12M3301
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA1661-02 Feb. 05
•
•
•
•
Fast and soft reverse-recovery
Low losses
High SOA
Passivation: SIPOS Nitride plus Polyimide
Maximum rated values
Parameter
1)
Symbol
V
RRM
I
F
I
FRM
T
vj
Conditions
min
max
3300
100
Unit
V
A
A
°C
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
1)
Limited by T
vjmax
-40
200
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
Parameter
Continuous forward voltage
Continuous reverse current
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
2)
2)
Symbol
V
F
I
R
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 100 A
V
R
= 3300 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
I
F
= 100 A,
V
R
= 1800 V,
di/dt = 550 A/µs,
L
σ
= 1200 nH,
Inductive load,
Switch:
2x 5SMX12M3300
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
2.0
typ
2.3
2.35
5
2.5
115
140
65
110
470
800
85
145
max
2.7
Unit
V
V
µA
7
mA
A
A
µC
µC
ns
ns
mJ
mJ
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLX 12M3301
200
175
250
V
CC
= 1800 V
di/dt = 550 A/µs
T
vj
= 125 °C
L
σ
= 1200 nH
E
rec
150
25°C
200
125°C
E
rec
[mJ], Q
rr
[µC], I
rr
[A]
150
125
I
F
[A]
100
75
50
100
I
rr
Q
rr
50
25
0
0
0.5
1
1.5
2
V
F
[V]
2.5
3
3.5
4
0
0
50
100
I
F
[A]
150
200
250
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
150
2100
200
175
V
CC
= 1800 V
I
F
= 100 A
T
vj
= 125 °C
L
σ
= 1200 nH
400
350
300
250
I
rr
200
E
rec
Q
rr
150
100
50
0
0
200
400
600
di/dt [A/µs]
800
1000
1200
100
V
CC
= 1800 V
I
F
= 100 A
di/dt = 550 A/µs
T
vj
= 125 °C
L
σ
= 1200 nH
1400
150
700
50
0
0
100
75
-50
-700
50
-100
-1400
25
-150
0
2
4
time [us]
6
8
-2100
0
Fig. 3
Typical diode reverse recovery behaviour
Fig. 4
Typical reverse recovery vs. di/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1661-02 Feb. 05
page 2 of 3
Q
rr
[µC], I
rr
[A]
125
E
rec
[mJ]
V
R
[V]
I
R
[A]
5SLX 12M3301
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W
front metal
thickness
Metallization
3)
3)
Unit
13.6 x 13.6
10.38 x 10.38
385
±
15
AlSi1
Al / Ti / Ni / Ag
4
1.2
mm
mm
µm
µm
µm
front (A)
back (K)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
A (Anode)
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1661-02 Feb. 05
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