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5SHY42L6530

Description
Asymmetric Integrated Gate- Commutated Thyristor
File Size762KB,9 Pages
ManufacturerABB
Websitehttp://www.abb.com/
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5SHY42L6530 Overview

Asymmetric Integrated Gate- Commutated Thyristor

V
DRM
I
TGQM
I
TSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
6500
4200
26×10
3
2.0
0.54
4000
V
A
A
V
mΩ
V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 42L6530
PRELIMINARY
Doc. No. 5SYA1246-00 Aug. 07
High snubberless turn-off rating
Wide temperature range
High electromagnetic immunity
Simple control interface with status feedback
AC or DC supply voltage
Option for series connection (contact factory)
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Rep. peak off-state voltage V
DRM
Gate Unit energized, Note 1
Permanent DC voltage for V
DC-link
100 FIT failure rate of GCT
Reverse voltage
Characteristic values
min
typ
max
6500
4000
17
Unit
V
V
V
Unit
mA
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
V
RRM
min
typ
Parameter
Symbol Conditions
Rep. peak off-state current I
DRM
V
D
= V
DRM
, Gate Unit energized
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below -25 °C
max
50
Mechanical data
(see Fig. 11, 12)
1)
Maximum rated values
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
± 0.1 mm
H
m
D
s
D
a
l
h
Anode to Gate
Anode to Gate
± 1.0 mm
± 1.0 mm
min
36
min
25.3
33
10
typ
40
typ
85
max
44
max
25.8
2.9
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
Length
Height
439
40
173
mm
mm
mm
Width IGCT
w
± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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