V
RRM
=
I
F
=
6500 V
50 A
Fast-Diode Die
5SLX 12M6500
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA1666-01 July 07
•
•
•
•
Fast and soft reverse recovery
Low losses
Large SOA
Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values
Parameter
1)
Symbol
V
RRM
I
F
I
FRM
T
vj
Conditions
T
vj
≥
25 °C
Limited by T
vjmax
min
max
6500
50
100
Unit
V
A
A
°C
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
1)
-40
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
Parameter
Continuous forward voltage
Continuous reverse current
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
2)
2)
Symbol
V
F
I
R
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 50 A
V
R
= 6500 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
I
F
= 50 A,
V
R
= 3600 V,
di/dt = 230 A/µs,
L
σ
= 3400 nH,
Inductive load,
Switch:
2x 5SMX12M6500
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
typ
3.2
3.4
20
3
70
80
65
100
1700
2250
100
180
max
Unit
V
V
µA
6
mA
A
A
µC
µC
ns
ns
mJ
mJ
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLX 12M6500
100
90
80
25 °C
E
rec
[mJ], Q
rr
[µC], I
rr
[A]
70
60
I
F
[A]
50
40
30
20
10
125 °C
250
V
CC
= 3600 V
di/dt = 230 A/µs
T
vj
= 125 °C
L
σ
= 3.4 µH
E
rec
200
150
Q
rr
100
I
rr
50
E
rec
[mJ] = -1.78 x 10
-2
x I
F 2
+ 3.8 x I
F
+ 34
0
0
1
2
V
F
[V]
3
4
5
0
0
10
20
30
40
50
I
F
[A]
60
70
80
90 100
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
60
40
20
0
I
R
-20
-40
-60
-80
-100
0
2000
4000
time [ns]
6000
V
R
I
F
[A]
V
R
= 3600 V
I
F
= 50 A
di/dt = 230 A/µs
T
vj
= 125 °C
L
σ
= 3.4 µH
0
-500
-1000
-1500
-2000
-2500
-3000
-3500
-4000
8000
V
F
[V]
E
rec
[mJ], Q
rr
[µC], I
rr
[A]
200
V
CC
= 3600 V
I
F
= 50 A
T
vj
= 125 °C
L
σ
= 3.4 µH
150
E
rec
Q
rr
100
I
rr
50
0
0
50
100
150
200
250
di/dt [A/µs]
Fig. 3
Typical diode reverse recovery behaviour
Fig. 4
Typical reverse recovery vs. di/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1666-01 July 07
page 2 of 3
5SLX 12M6500
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W
front metal
thickness
Metallization
3)
3)
Unit
13.6 x 13.6
8.58 x 8.58
670
±
20
AlSi1
Al / Ti / Ni /Ag
4
1.2
mm
mm
µm
µm
µm
front (A)
back (K)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
13.56
±0.05
8.58
A (Anode)
8.58
13.56
±0.05
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1666-01 July 07
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