V
CE
I
C
=
=
1200 V
100 A
IGBT-Die
5SMY 12K1201
Die size: 11.9 x 11.2 mm
Doc. No. 5SYA1635-01 Sep 06
•
Ultra low loss thin IGBT die
•
Highly rugged SPT
+
design
•
Large bondable emitter area
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
Junction temperature
1)
1)
Symbol Conditions
V
CES
I
C
I
CM
V
GES
t
psc
T
vj
V
CC
= 900 V, V
CEM
≤
1200 V
V
GE
≤
15 V, T
vj
≤
125 °C
Limited by T
vjmax
V
GE
= 0 V, T
vj
≥
25 °C
min
max
1200
100
200
Unit
V
A
A
V
µs
°C
-20
20
10
-40
150
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SMY 12K1201
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Internal gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
2)
Symbol Conditions
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
R
Gint
t
d(on)
t
r
t
d(off)
t
f
V
CC
= 600 V, I
C
= 100 A,
R
G
= 10
Ω,
V
GE
=
±15
V,
L
σ
= 60 nH,
inductive load
V
CC
= 600 V, I
C
= 100 A,
R
G
= 10
Ω,
V
GE
=
±15
V,
L
σ
= 60 nH,
inductive load
V
CC
= 600 V, I
C
= 100 A,
V
GE
= ±15 V, R
G
= 10
Ω,
L
σ
= 60 nH,
inductive load,
FWD: 5SLX 12H1200
V
CC
= 600 V, I
C
= 100 A,
V
GE
= ±15 V, R
G
= 10
Ω,
L
σ
= 60 nH,
inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
V
GE
= 0 V, I
C
= 1 mA, T
vj
= 25 °C
I
C
= 100 A, V
GE
= 15 V
V
CE
= 1200 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1200
typ
max
Unit
V
1.8
2.0
100
400
-200
5
6.2
1050
7.43
0.52
0.34
2
125
135
60
60
420
490
60
75
8.6
200
7
V
V
µA
µA
nA
V
nC
nF
Ω
ns
ns
ns
ns
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
I
C
= 4 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 100 A, V
CE
= 600 V, V
GE
= -15 ..15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
Turn-on switching energy
E
on
mJ
12.4
6.8
mJ
10.8
470
A
Turn-off switching energy
E
off
Short circuit current
2)
I
SC
t
psc
≤
10
μs,
V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 900 V, V
CEM
≤
1200 V
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1635-01 Sep 06
page 2 of 5
5SMY 12K1201
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W (except gate pad)
front metal
gate pad
thickness
Metallization
3)
3)
Unit
11.9
x
11.2
10.4
x
9.7
1.2
x
1.22
130 ± 20
AlSi1
Al / Ti / Ni / Ag
4
1.2
mm
mm
mm
µm
µm
µm
L
x
W
front (E)
back (C)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
1.31
1.20
±0.05
G
11.19
±0.05
1.22
±0.05
1.32
10.06
9.67
Emitter
10.37
10.77
11.89
±0.05
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1635-01 Sep 06
page 3 of 5
5SMY 12K1201
300
200
V
CE
= 20 V
180
250
25 °C
200
160
140
125 °C
120
I
C
[A]
I
C
[A]
150
100
80
100
60
40
20
V
GE
= 15 V
125 °C
25 °C
50
0
0
1
2
V
CE
[V]
3
4
5
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
V
GE
[V]
Fig. 1
Typical on-state characteristics
Fig. 2
Typical transfer characteristics
100
90
80
70
E
on
, E
off
[mJ]
60
50
40
30
20
E
off
10
E
sw
[mJ] = 1.23 x 10
-3
x I
C2
+ 2.33 x 10
-2
x I
C
+ 7.29
45
V
CC
= 600 V
R
G
= 10 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
E
on
, E
off
[mJ]
40
35
30
25
20
15
E
off
10
5
0
0
50
100
150
I
C
[A]
200
250
300
0
10
20
30
40
50
60
70
R
G
[ohm]
V
CC
= 600 V
I
C
= 100 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
E
on
E
on
0
Fig. 3
Typical switching characteristics vs
collector current
Fig. 4
Typical switching characteristics vs
gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1635-01 Sep 06
page 4 of 5
5SMY 12K1201
20
10
C
ies
V
CC
= 600 V
15
V
CC
= 800 V
V
GE
[V]
V
GE
= 0 V
f
OSC
= 1 MHz
V
OSC
= 50 mV
C [nF]
1
C
oes
10
C
res
5
I
C
= 100 A
T
vj
= 25 °C
0
0.0 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8
Q
g
[µC]
0.9 1.0
0.1
0
5
10
15
20
V
CE
[V]
25
30
35
Fig. 5
Typical gate charge characteristics
Fig. 6
Typical capacitances vs
collector-emitter voltage
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1635-01 Sep 06
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