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5SMY12J1200

Description
IGBT-Die
CategoryDiscrete semiconductor    The transistor   
File Size64KB,5 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SMY12J1200 Overview

IGBT-Die

5SMY12J1200 Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instructionUNCASED CHIP, S-XUUC-N2
Contacts2
Reach Compliance Codecompli
Maximum collector current (IC)75 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
JESD-30 codeS-XUUC-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)570 ns
Nominal on time (ton)225 ns
Base Number Matches1
V
CE
I
C
=
=
1200 V
75 A
IGBT-Die
5SMY 12J1200
Die size: 10.2 x 10.2 mm
Doc. No. 5SYA1636-01 Sep 06
Ultra low loss thin IGBT die
Highly rugged SPT
+
design
Large bondable emitter area
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
Junction temperature
1)
1)
Symbol Conditions
V
CES
I
C
I
CM
V
GES
t
psc
T
vj
V
CC
= 900 V, V
CEM
1200 V
V
GE
15 V, T
vj
125 °C
Limited by T
vjmax
V
GE
= 0 V, T
vj
25 °C
min
max
1200
75
150
Unit
V
A
A
V
µs
°C
-20
20
10
-40
150
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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