V
CE
I
C
=
=
1700 V
1600 A
ABB HiPak
TM
IGBT Module
5SNA 1600N170100
Doc. No. 5SYA1564-01 Oct 06
•
Low-loss, rugged SPT chip-set
•
Smooth switching SPT chip-set for
good EMC
•
Industry standard package
•
High power density
•
AlSiC base-plate for high power
cycling capability
•
AlN substrate for low thermal
resistance
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques
1)
2)
2)
1)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FRM
I
FSM
t
psc
V
isol
T
vj
T
vj(op)
T
c
T
stg
M
s
M
t1
M
t2
Conditions
V
GE
= 0 V, T
vj
≥
25 °C
T
c
= 80 °C
t
p
= 1 ms, T
c
= 80 °C
min
max
1700
1600
3200
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm
-20
T
c
= 25 °C, per switch (IGBT)
20
9100
1600
3200
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave
V
CC
= 1200 V, V
CEM CHIP
≤
1700 V
V
GE
≤
15 V, T
vj
≤
125 °C
1 min, f = 50 Hz
-40
-40
-40
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
4
8
2
13200
10
4000
150
125
125
125
6
10
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 1600N170100
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
4)
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
3)
Symbol
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
GE
= 0 V, I
C
= 10 mA, T
vj
= 25 °C
I
C
= 1600 A, V
GE
= 15 V
V
CE
= 1700 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1700
2.0
2.3
typ
max
Unit
V
2.3
2.6
2.6
2.9
8
80
V
V
mA
mA
nA
V
µC
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
I
C
= 160 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 1600 A, V
CE
= 900 V,
V
GE
= -15 V .. 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
V
CC
= 900 V,
I
C
= 1600 A,
R
G
= 0.82
Ω,
V
GE
=
±15
V,
L
σ
= 50 nH, inductive load
V
CC
= 900 V,
I
C
= 1600 A,
R
G
= 0.82
Ω,
V
GE
=
±15
V,
L
σ
= 50 nH, inductive load
V
CC
= 900 V, I
C
= 1600 A,
V
GE
= ±15 V, R
G
= 0.82
Ω,
L
σ
= 50 nH, inductive load
V
CC
= 900 V, I
C
= 1600 A,
V
GE
= ±15 V, R
G
= 0.82
Ω,
L
σ
= 50 nH, inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
-500
4.5
14.6
152
14.6
6.4
290
300
175
190
1050
1140
150
170
380
500
6.5
nF
ns
ns
ns
ns
Turn-on switching energy
E
on
mJ
530
460
mJ
590
7200
15
A
nH
mΩ
Turn-off switching energy
Short circuit current
Module stray inductance
Resistance, terminal-chip
3)
4)
E
off
I
SC
L
σ
CE
R
CC’+EE’
t
psc
≤
10
μs,
V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 1200 V, V
CEM CHIP
≤
1700 V
T
C
= 25 °C
T
C
= 125 °C
0.10
0.13
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 2 of 9
5SNA 1600N170100
Diode characteristic values
Parameter
Forward voltage
6)
5)
Symbol
V
F
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 1600 A
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
V
CC
= 900 V,
I
F
= 1600 A,
V
GE
=
±15
V,
R
G
= 0.82
Ω
L
σ
= 50 nH
inductive load
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
typ
1.65
1.7
1090
1400
390
690
620
830
280
480
max
2.0
2.0
Unit
V
A
µC
ns
mJ
Reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
5)
6)
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
Parameter
IGBT thermal resistance
junction to case
7)
Symbol
R
th(j-c)IGBT
R
th(j-c)DIODE
2)
Conditions
min
typ
max
Unit
0.011 K/W
0.018 K/W
0.012
0.024
K/W
K/W
Diode thermal resistance
junction to case
IGBT thermal resistance
case to heatsink
Diode thermal resistance
case to heatsink
2)
R
th(c-s)IGBT
IGBT per switch,
λ
grease = 1W/m
x
K
R
th(c-s)DIODE
Diode per switch,
λ
grease = 1W/m
x
K
7)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
Mechanical properties
Parameter
Dimensions
Clearance distance in air
Surface creepage distance
Mass
7)
7)
Symbol
L
x
W
d
a
d
s
m
x
Conditions
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
min
19
19
32
32
typ
max
Unit
mm
mm
mm
H Typical , see outline drawing
130
x
140
x
38
920
g
Thermal and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 3 of 9
5SNA 1600N170100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for industrial level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 4 of 9
5SNA 1600N170100
3200
2800
2400
2000
I
C
[A]
I
C
[A]
1600
1200
800
400
V
GE
= 15 V
0
0
1
2
V
CE
[V]
3
4
5
3200
V
CE
= 25 V
2800
25 °C
125 °C
2400
2000
1600
1200
125 °C
800
25 °C
400
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13
V
GE
[V]
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
3200
17V
2800
2400
2000
I
C
[A]
1600
1200
800
400
T
vj
= 25 °C
0
0
1
2
3
V
CE
[V]
4
5
6
15V
13V
11V
9V
I
C
[A]
3200
17V
2800
2400
2000
1600
1200
800
400
T
vj
= 125 °C
0
0
1
2
3
V
CE
[V]
4
5
6
15V
13V
11V
9V
Fig. 3
Typical output characteristics, chip level
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 5 of 9
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