DN2625
N-Channel Depletion-Mode Vertical DMOS FETs
Features
►
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Very low gate threshold voltage
Design to be source-driven
Low switching losses
Low effective output capacitance
Design for inductive load
Well matched for low second harmonic
General Description
The Supertex DN2625 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
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Medical ultrasound beamforming
Ultrasonic array focusing transmitter
Piezoelectric transducer waveform drivers
High speed arbitrary waveform generator
Normally-on switches
Solid state relays
Constant current sources
Power supply circuits
Switching Waveforms and Test Circuit
V
DD
0V
90%
INPUT
-10V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
L
OUTPUT
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
Thermal Characteristics
Package
D-PAK
14-Lead QFN
I
D
(continuous)
1
(A)
I
D
(pulsed)
(A)
R
ΘjA
2
(
O
C/W)
R
ΘjC
(
O
C/W)
I
DR1
(A)
I
DRM
(A)
1.1
3.3
50
45
5.5
4.0
1.1
3.3
Notes:
1. I
D
(Continuous) is limited by Max. T
J
2. 4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad.
DN2625
Ordering Information
Package Options
Device
TO-252
(D-PAK)
DN2625K4-G
14-Lead QFN
5x5mm body,
1.0mm height (max), 1.27mm pitch
BV
DSX
/
BV
DGX
(V)
V
GS(OFF)
(max V)
(V
GS
=0.9V)
(min A)
I
DS
DN2625
DN2625K6-G
250
-2.1
3.3
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
Drain
GATE
11
DRAIN
14
DRAIN
13
DRAIN
12
11 GATE
SOURCE 2
10 SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
250V
250V
±20V
-55
O
C to +150
O
C
300
O
C
Gate
Source
SOURCE 3
9 SOURCE
SOURCE 4
5
DRAIN
6
DRAIN
7
DRAIN
8 SOURCE
TO-252 D-PAK
(top view)
14-Lead QFN
(top view)
Product Marking
YYWW
DN2625
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
TO-252 D-PAK
DN2625
LLLLLL
YYWW
AAACCC
L = Lot Number
YY = Year Sealed
WW = Week Sealed
A = Assembler ID
C = Country of Origin
= “Green” Packaging
14-Lead QFN
Electrical Characteristics
@25
O
C unless otherwise specified
Symbol
BV
DSX
BV
DGX
V
GS(OFF)
ΔV
GS(OFF)
Parameter
Drain-to-source breakdown voltage
Drain-to-gate breakdown voltage
Gate-to-source OFF voltage
Change in V
GS(OFF)
with temperature
Min
250
250
-1.5
-
Typ
-
-
-
-
Max
-
-
-2.1
4.5
Units
V
V
V
mV/
O
C
Conditions
V
GS
= -2.5V, I
D
= 50µA
V
GS
= -2.5V, I
D
= 50µA
V
DS
= 15V, I
D
= 100µA
V
DS
= 15V, I
D
= 100µA
2
DN2625
Electrical Characteristics
(cont) @25
O
C unless otherwise specified
Symbol
I
GSS
I
D(OFF)
I
DSS
I
DS(PULSE)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Parameter
Gate body leakage current
Drain-to-source leakage current
-
Saturated drain-to-source current
Pulsed drain-to-source current
Static drain-to-source ON resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
1.1
3.1
-
-
1.0
-
-
-
-
-
-
-
-
-
-
3.3
-
-
-
800
70
18
-
-
-
-
-
200
-
-
3.5
1.1
-
1000
210
70
10
20
ns
10
20
1.8
V
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 3.0Ω,
V
GS
= 0v to -10V
V
GS
= -2.5V, I
SD
= 150mA
pF
µA
A
A
Ω
%/
O
C
mmho
Min
-
-
Typ
-
-
Max
100
1.0
Units
nA
µA
Conditions
V
GS
= ±20V, V
DS
= 0V
V
DS
= 250V, V
GS
= -5.0V
V
DS
= 250V, V
GS
= -5.0V,
T
A
= 125
O
C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0.9V, V
DS
= 15V with duty
cycle of 1%
V
GS
= 0V, I
D
= 1.0A
V
GS
= 0V, I
D
= 200mA
V
DS
= 10V, I
D
= 150mA
V
GS
= -2.5V,
V
DS
= 25V,
f = 1.0MHz
Typical Performance Curves
Output Characteristics
7.5
7.0
6.5
6.0
5.5
5.0
4.5
I
D
(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
50
100
V
DS
(V)
150
200
250
V
GS
= 2.0V
V
GS
= 1.5V
V
GS
= 1.0V
V
GS
= 0.5V
V
GS
= 0V
V
GS
= -0.5V
V
GS
= -1.0V
V
GS
= -1.5V
V
GS
= -2.0V
3
DN2625
Typical Performance Curves
(cont.)
Saturation Characteristics
5.5
5.0
4.5
4.0
3.5
I
D
(A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
V
DS
(V)
6
7
8
9
10
Vgs = -2V
Vgs = -1.5V
Vgs = -1V
Vgs = -0.5V
Vgs = 0V
Vgs = 0.5V
Vgs = 1V
Vgs = 1.5V
Vgs = 2V
Transfer Characteristics
10
9
8
7
6
I
D
(A)
5
4
3
2
1
0
-3.0
-2.0
-1.0
0.0
1.0
V
GS
(V)
2.0
3.0
4.0
Temp = -55
O
C
Temp = 25
O
C
Temp = 125
O
C
BV
DSX
Variation With Temperature
1.20
1.15
1.10
BV
DSX
(normalized)
1.05
1.00
0.95
0.90
0.85
0.80
-50
-25
0
25
50
T
J
(
O
C)
75
100
125
150
V
GS
= -2.5V
I
D
= 1mA
4
DN2625
Typical Performance Curves
(cont.)
On-Resistance vs Drain Current
5.0
4.5
4.0
3.5
R
DS
(on) (ohms)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
(A)
3.5
4.0
4.5
5.0
5.5
V
GS
= 1V
Transconductance vs Drain Current
4.0
3.5
V
DS
= 10V
3.0
Temp = -55
O
C
G
FS
(siemens)
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
(A)
3.5
4.0
4.5
Temp = 25
O
C
Temp = 125
O
C
5.0
5.5
6.0
V
GS(OFF)
and R
DS(ON)
Variation With Temperature
1.25
1.20
1.15
V
GS
(off) (normalized)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
-25
0
25
50
T
J
(
O
C)
75
100
125
R
DS
(on) @V
GS
= 1V
I
D
= 1A
V
GS
(off) @100µA
V
DS
= 15V
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
150
R
DS
(on) (normalized)
5
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