Ordering number : EN8585
2SJ660
P-Channel Silicon MOSFET
2SJ660
Features
•
•
•
•
•
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--60
±20
--26
--104
1.65
50
150
--55 to +150
115
--26
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=30V, L=200µH, IAV=--26A
*2
L≤200µH, Single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=--1mA, VGS=0V
VDS=-
-60V, VGS=0V
VGS=
±16V,
VDS=0V
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-13A
ID=--13A, VGS=--10V
ID=--13A, VGS=--4V
Ratings
min
--60
--1
±10
--1.2
11
19
46
67
60
94
--2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : J660
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1805QA MSIM TB-00001077 No.8585-1/4
2SJ660
--50
--45
--40
ID -- VDS
--1
0V
V
Tc=25°C
--50
ID -- VGS
25
°
C
--1.5
--2.0
--6
VDS=
--
10V
--45
--40
Drain Current, ID -- A
Drain Current, ID -- A
--30
--25
--20
--15
--10
--5
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
--30
--25
--20
--15
--10
VGS= --3V
0
0
--0.5
--1.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
Drain-to-Source Voltage, VDS -- V
140
IT08737
140
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
25
--5
Tc
=7
5
°
C
--2
5
°
C
°
C
Tc=
--2
--35
--4V
--35
5
°
C
RDS(on) -- Tc
ID= --13A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
100
100
80
80
Tc=75°C
60
13
= --
ID
A,
= --
V GS
4V
60
25°C
40
--
I D=
13A
= --
V GS
,
10V
40
--25°C
20
0
--2
20
0
--50
--3
--4
--5
--6
--7
--8
--9
--10
--25
0
25
50
75
100
75
°
C
IT08738
125
150
IT08740
Gate-to-Source Voltage, VGS -- V
100
y
fs -- ID
IT08739
--100
7
5
3
2
Case Temperature, Tc --
°
C
IS -- VSD
VGS=0V
Forward Transfer Admittance,
y
fs -- S
7
5
VDS= --10V
25
°
2
10
7
5
3
2
1.0
7
5
--0.1
Tc
25
°
= --
C
C
75
°
Source Current, IS -- A
3
C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
0
--0.3
--0.01
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
IT08741
--0.6
--0.9
--1.2
--1.5
IT08742
Drain Current, ID -- A
5
3
SW Time -- ID
td(off)
10000
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD= --30V
VGS= --10V
7
5
3
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
2
2
1000
7
5
3
2
100
7
5
tr
tf
3
2
td(on)
100
7
5
2
3
5
7 --1.0
2
3
5
7 --10
2
3
0
--5
--10
10
--0.1
Tc=75
°
C
25
°
C
--25
°
C
Ciss
Coss
Crss
--15
--20
--25
--30
IT08744
Drain Current, ID -- A
IT08743
Drain-to-Source Voltage, VDS -- V
No.8585-3/4
2SJ660
--10
--9
VGS -- Qg
VDS= --30V
ID= --26A
Drain Current, ID -- A
3
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
ASO
IDP= --104A
ID= --26A
10
≤10µs
µ
s
10
0
µ
s
1m
s
10
ms
1
DC
00m
op
s
era
tio
n
Gate-to-Source Voltage, VGS -- V
--8
--7
--6
--5
--4
--3
--2
--1
0
0
10
20
30
40
50
IT08745
Operation in
this area is
limited by RDS(on).
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
--0.1
--0.1
5 7 --10
2
3
Total Gate Charge, Qg -- nC
2.0
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
60
5 7 --100
IT08746
PD -- Tc
Allowable Power Dissipation, PD -- W
1.65
1.5
50
40
1.0
30
20
0.5
10
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08735
Case Temperature, Tc --
°C
IT08747
Note on usage : Since the 2SJ660 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2005. Specifications and information herein are subject
to change without notice.
PS No.8585-4/4
ARM Technology
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