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5SGF40L4502

Description
Asymmetric Gate turn-off Thyristor
CategoryAnalog mixed-signal IC    Trigger device   
File Size341KB,9 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SGF40L4502 Overview

Asymmetric Gate turn-off Thyristor

5SGF40L4502 Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CXDB-X4
Reach Compliance Codecompli
ConfigurationSINGLE
Maximum DC gate trigger current4000 mA
Maximum DC gate trigger voltage1.2 V
JESD-30 codeO-CXDB-X4
On-state non-repetitive peak current25000 A
Number of components1
Number of terminals4
Maximum on-state current1180000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current1850 A
Off-state repetitive peak voltage4500 V
Repeated peak reverse voltage17 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeGATE TURN-OFF SCR
Base Number Matches1
V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
Dclink
=
=
=
=
=
=
4500
4000
25×10
3
1.2
0.65
2800
V
A
A
V
mΩ
V
Asymmetric Gate turn-off
Thyristor
5SGF 40L4502
Doc. No. 5SYA1209-04 Jan. 03
Patented free-floating silicon technology
Low on-state and switching losses
Annular gate electrode
Industry standard housing
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Permanent DC voltage for
100 FIT failure rate
Characteristic values
Symbol Conditions
V
DRM
V
RRM
V
Dclink
Ambient cosmic radiation at sea level
in open air.
V
GR
2 V
min
typ
max
4500
17
2800
Unit
V
V
V
Parameter
Repetitive peak off-state
current
Repetitive peak reverse
current
Symbol Conditions
I
DRM
I
RRM
V
D
= V
DRM
, V
GR
2 V
V
R
= V
RRM
, R
GK
=
∞ Ω
min
typ
max
100
50
Unit
mA
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
H
m
D
s
Anode to Gate
± 0.1 mm
± 0.5 mm
min
36
min
typ
40
typ
75
26
1.5
max
44
max
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
33
Air strike distance
D
a
Anode to Gate
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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