V
DRM
I
TGQM
I
TSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
5500
520
3.5×10
3
2.3
2.3
3300
V
A
A
V
mΩ
V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 06F6010
PRELIMINARY
Doc. No. 5SYA1222-05 Aug 07
•
High snubberless turn-off rating
•
Optimized for medium frequency (<1 kHz) and
low turn-off losses
•
High reliability
•
High electromagnetic immunity
•
Simple control interface with status feedback
•
AC or DC supply voltage
•
Suitable for series connection (contact factory)
Blocking
Maximum rated values
Note 1
Parameter
Repetitive peak off-state
voltage
Permanent DC voltage for
100 FIT failure rate of
RC-GCT
Characteristic values
Symbol Conditions
V
DRM
Gate Unit energized
V
DC-link
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
min
typ
max
5500
3300
Unit
V
V
Parameter
Repetitive peak off-state
current
Symbol Conditions
I
DRM
V
D
= V
DRM
, Gate Unit energized
min
typ
max
20
Unit
mA
Mechanical data
(see Fig. 20, 21)
Maximum rated values
Note 1
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
± 0.1 mm
H
m
D
s
D
a
l
h
w
Anode to Gate
Anode to Gate
± 1.0 mm
± 1.0 mm
± 1.0 mm
min
14
min
26.0
33
13
typ
16
typ
47
max
18
max
26.5
1.01
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
Length
Height
Width IGCT
296
47
208
mm
mm
mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHX 06F6010
GCT Data
On-state
(see Fig. 3 to 6, 23)
Maximum rated values
Note 1
Parameter
Max. average on-state
current
Symbol Conditions
I
T(AV)M
Half sine wave, T
C
= 85 °C,
Double side cooled
min
typ
max
210
340
Unit
A
A
3
Max. RMS on-state current I
T(RMS)
Max. peak non-repetitive
surge on-state current
Limiting load integral
Max. peak non-repetitive
surge on-state current
Limiting load integral
Critical rate of rise of on-
state current
Characteristic values
I
TSM
I
2
t
I
TSM
I
2
t
di
T
/dt
cr
t
p
= 10 ms, T
j
= 115 °C, sine wave
after surge: V
D
= V
R
= 0 V
t
p
= 1 ms, T
j
= 115 °C, sine wave
after surge: V
D
= V
R
= 0 V
For higher di
T
/dt and current lower
than 30 A an external retrigger pulse
is required.
min
typ
3.5×10
A
A
2
s
A
A
2
s
A/µs
61.3×10
8×10
3
3
32×10
TBD
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
V
T
I
T
= 520 A, T
j
= 115 °C
V
(T0)
r
T
T
j
= 115 °C
I
T
= 100...1000 A
max
3.5
2.3
2.3
Unit
V
V
mΩ
Turn-on switching
Maximum rated values
Note 1
(see Fig. 23, 25)
Symbol Conditions
di
T
/dt
cr
f = 500 Hz, T
j
= 115 °C,
I
T
= 520 A, V
D
= 3300 V
Symbol Conditions
V
D
= 3300 V, T
j
= 115 °C
t
don
I
T
= 520 A, di/dt = V
D
/ L
i
t
don SF
L
i
= 17.5 µH
C
CL
= 0.5 µF, L
CL
= 1 µH
t
r
E
on
min
typ
max
190
Unit
A/µs
Parameter
Critical rate of rise of on-
state current
Characteristic values
Parameter
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
min
typ
max
3
7
1
0.3
Unit
µs
µs
µs
J
Turn-off switching
(see Fig. 7, 8, 23, 25)
Maximum rated values
Note 1
Parameter
Max. controllable turn-off
current
Max. controllable turn-off
current
Characteristic values
Symbol Conditions
I
TGQM
V
DM
≤
V
DRM,
T
j
= 115 °C,
V
D
= 3300 V, R
S
= 3.5
Ω,
C
CL
= 0.5 µF, L
CL
≤
1 µH
I
TGQM
V
DM
≤
V
DRM,
T
j
= 115 °C,
V
D
= 3900 V, R
S
= 3.5
Ω,
C
CL
= 0.5 µF, L
CL
≤
1 µH
min
typ
max
520
Unit
A
260
A
Parameter
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
Symbol Conditions
V
D
= 3300 V, T
j
= 115 °C
t
doff
V
DM
≤
V
DRM
, R
S
= 3.5
Ω
t
doff SF
I
TGQ
= 520 A, L
i
= 17.5 µH
C
CL
= 0.5 µF, L
CL
= 1 µH,
E
off
min
typ
max
6
7
3
Unit
µs
µs
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07
page 2 of 13
5SHX 06F6010
Diode Data
On-state
(see Fig. 9 to 12, 24, 25)
Maximum rated values
Note 1
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
F(AV)M
Half sine wave, T
C
= 85 °C
min
typ
max
110
180
Unit
A
A
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
Max. RMS on-state current I
F(RMS)
I
FSM
I
2
t
I
FSM
I
2
t
Symbol Conditions
V
F
I
F
= 520 A, T
vj
= 115°C
V
(F0)
r
F
T
vj
= 115°C
I
F
= 100...1000 A
min
typ
t
p
= 1 ms, T
vj
= 115°C, V
R
= 0 V
t
p
= 10 ms, T
vj
= 115°C, V
R
= 0 V
2.5×10
3
31.25×10
8×10
3
3
32×10
max
6.3
3.3
5.8
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Turn-on
(see Fig. 24, 25)
Characteristic values
Parameter
Peak forward recovery
voltage
Symbol Conditions
V
FRM
dI
F
/dt = 300 A/µs, T
vj
= 115°C
dI
F
/dt = 1400 A/µs, T
vj
= 115°C
min
typ
max
80
250
Unit
V
V
Turn-off
(see Fig. 13 to 17, 24, 25)
Maximum rated values
Note 1
Parameter
Symbol Conditions
Max. decay rate of on-state di/dt
crit
I
FM
= 520 A, T
vj
= 115 °C
current
V
DClink
= 3900 V
Characteristic values
min
typ
max
190
Unit
A/µs
Parameter
Reverse recovery current
Reverse recovery charge
Turn-off energy
Symbol Conditions
I
FM
= 520 A, V
DC-Link
= 3300 V
I
RM
-dI
F
/dt = 190 A/µs, L
CL
= 1 µH
Q
rr
C
CL
= 0.5 µF, R
S
= 3.5
Ω,
E
rr
T
vj
= 115°C, D
CL
= 5SDF 02D6004
min
typ
max
320
TBD
1.3
Unit
A
µC
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07
page 3 of 13
5SHX 06F6010
Gate Unit Data
Power supply
(see Fig. 18, 19)
Maximum rated values
Note 1
Parameter
Gate Unit voltage
(Connector X1)
Min. current needed to power
up the Gate Unit
Characteristic values
Symbol Conditions
V
GIN,RMS
AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
galvanic isolation to power circuit.
I
GIN Min
Rectified average current
see application note 5SYA 2031
min
28
typ
max
40
Unit
V
1.1
80
min
typ
max
7
A
W
Unit
A
Gate Unit power consumption P
GIN Max
Parameter
Internal current limitation
Symbol Conditions
I
GIN Max
Rectified average current limited by
the Gate Unit
Optical control input/output
2)
(see Fig. 23)
Maximum rated values
Note 1
Parameter
Min. on-time
Min. off-time
Characteristic values
Symbol Conditions
t
on
t
off
Symbol Conditions
P
on CS
CS: Command signal
P
off CS
SF: Status feedback
Valid for 1mm plastic optical fiber
P
on SF
min
40
40
min
-15
-19
typ
max
Unit
µs
µs
Parameter
Optical input power
Optical noise power
Optical output power
Optical noise power
Pulse width threshold
External retrigger pulse width
typ
max
-1
-45
-1
-50
400
Unit
dBm
dBm
dBm
dBm
ns
ns
P
off SF
t
retrig
(POF)
t
GLITCH
Max. pulse width without response
600
1100
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors
2)
(see Fig. 20 to 22)
Parameter
Gate Unit power connector
LWL receiver for command signal
LWL transmitter for status feedback
Symbol Description
3)
X1
AMP: MTA-156, Part Number 641210-5
CS
SF
Avago, Type HFBR-2528
Avago, Type HFBR-1528
4)
4)
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Avago Technologies, www.avagotech.com
Visual feedback
(see Fig. 22)
Parameter
Gate OFF
Gate ON
Fault
Power supply voltage OK
Symbol Description
LED1 "Light" when GCT is off
LED2
LED3
LED4
"Light" when gate-current is flowing
"Light" when not ready / Failure
"Light" when power supply is within specified range
Color
(green)
(yellow)
(red)
(green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07
page 4 of 13
5SHX 06F6010
Thermal
Maximum rated values
Note 1
Parameter
Junction operating temperature
Storage temperature range
Ambient operational temperature
Characteristic values
Symbol
T
vj
T
stg
T
a
Conditions
min
0
-40
0
typ
max
115
60
60
Unit
°C
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
Parameter
Symbol
Thermal resistance junction-to-case
R
th(jc)
of GCT
Thermal resistance case-to-
heatsink of GCT
Thermal resistance junction-to-case
of Diode
Thermal resistance case-to-
heatsink of Diode
R
th(ch)
R
th(jc)
Conditions
Double side cooled
Diode not dissipating
min
typ
max
40
16
53
17
Double side cooled
R
th(ch)
GCT not dissipating
Analytical function for transient thermal
impedance:
Z
thJC
(t) =
GCT
i
R
i
(K/kW)
τ
i
(s)
1
25.096
0.5619
∑
i
=
1
2
9.235
n
R
i
(1 - e
- t/
τ
i
)
3
3.727
0.0071
4
1.942
0.0020
0.0721
Diode
i
R
i
(K/kW)
τ
i
(s)
1
33.360
0.5623
2
12.255
0.0723
3
4.854
0.0072
4
2.537
0.0020
Fig. 1
Transient thermal impedance (junction-to-
case) vs. time (max. values)
Max. Turn-off current for Lifetime operation
•
•
•
calculated lifetime of on-board capacitors
20 years
with slightly forced air cooling (air velocity
> 0.5 m/s)
strong air cooling allows for increased
ambient temperature
Fig. 2
Max. turn-off current vs. frequency for lifetime
operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07
page 5 of 13
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