V
DRM
V
DSM
I
T(AV)M
I
T(RMS)
I
TSM
V
(T0)
r
T
=
=
=
=
=
=
=
8000
8500
1200
1880
35×10
3
1.25
0.48
V
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 12N8500
Doc. No. 5SYA1044-02 Nov. 04
•
•
•
•
•
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
V
DSM,
V
RSM
V
DRM,
V
RRM
V
RSM
dV/dt
crit
Parameter
Conditions
f = 5 Hz, t
p
= 10 ms
f = 50 Hz, t
p
= 10 ms
t
p
= 5 ms, single pulse
Exp. to 5360 V, T
vj
= 90°C
Symbol Conditions
I
DSM
I
RSM
5STP 12N8500 5STP 12N8200
8500 V
8000 V
9000 V
8200 V
7700 V
8600 V
2000 V/µs
min
typ
5STP 12N7800
7800 V
7300 V
8200 V
Characteristic values
max
1000
400
Unit
mA
mA
Forward leakage current
Reverse leakage current
V
DSM
, T
vj
= 90°C
V
RSM
, T
vj
= 90°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 90 kN, T
a
= 25 °C
min
35.3
56
typ
max
2.9
36
Air strike distance
D
a
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 12N8500
On-state
Maximum rated values
1)
Parameter
Average on-state current
RMS on-state current
Peak non-repetitive surge
current
Limiting load integral
Peak non-repetitive surge
current
Limiting load integral
Characteristic values
Symbol Conditions
I
T(AV)M
I
T(RMS)
I
TSM
It
I
TSM
It
Symbol Conditions
V
T
V
(T0)
r
T
I
H
I
L
T
vj
= 25 °C
T
vj
= 90 °C
T
vj
= 25 °C
T
vj
= 90 °C
I
T
= 1500 A, T
vj
= 90 °C
I
T
= 700 A - 2100 A, T
vj
= 90 °C
2
2
min
typ
max
1200
1880
35×10
3
Unit
A
A
A
6
Half sine wave, T
c
= 70°C
tp = 10 ms, T
vj
= 90 °C,
V
D
= V
R
= 0 V
tp = 8.3 ms, T
vj
= 90 °C,
V
D
= V
R
= 0 V
6.13×10
38×10
3
A
2
s
A
5.99×10
min
typ
max
2
1.25
0.48
150
125
600
800
6
A
2
s
Unit
V
V
mΩ
mA
mA
mA
mA
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
Latching current
Switching
Maximum rated values
1)
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Symbol Conditions
di/dt
crit
di/dt
crit
T
vj
= 90 °C,
I
TRM
= 2000 A,
V
D
≤
5360 V,
I
FG
= A, t
r
= 0.5 µs
Cont.
f = 50 Hz
Cont.
f = 1Hz
min
typ
max
250
1000
Unit
A/µs
A/µs
µs
Circuit-commutated turn-off t
q
time
Characteristic values
T
vj
= 90°C, I
TRM
= 2000 A,
V
R
= 200 V, di
T
/dt = -1 A/µs,
V
D
≤
0.67⋅V
DRM
, dv
D
/dt = 20V/µs
600
Parameter
Recovery charge
Symbol Conditions
Q
rr
T
vj
= 90°C, I
TRM
= A,
V
R
= 200 V,
di
T
/dt = -1 A/µs
V
D
= 0.4⋅V
RM
, I
FG
= 2 A,
t
r
= 0.5 µs, T
vj
= 25 °C
min
2800
typ
max
3400
Unit
µAs
Gate turn-on delay time
t
gd
3
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 2 of 6
5STP 12N8500
Triggering
Maximum rated values
1)
Parameter
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Average gate power loss
Characteristic values
Symbol Conditions
V
FGM
I
FGM
V
RGM
P
G(AV)
Symbol Conditions
V
GT
I
GT
V
GD
I
GD
T
vj
= 25 °C
T
vj
= 25 °C
V
D
= 0.4 x V
DRM
, T
vjmax
= 90 °C
V
D
= 0.4 x V
DRM
, T
vjmax
= 90°C
min
typ
max
12
10
10
Unit
V
A
V
see Fig. 9
min
typ
max
2.6
400
0.3
10
Unit
V
mA
V
mA
Parameter
Gate-trigger voltage
Gate-trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
typ
max
90
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 81...108 kN
Anode-side cooled
F
m
= 81...108 kN
Cathode-side cooled
F
m
= 81...108 kN
Double-side cooled
F
m
= 81...108 kN
Single-side cooled
F
m
= 81...108 kN
-40
min
typ
140
max
5.7
11.4
11.4
1
2
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
-t/
τ
i
)
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
3.400
0.8685
2
1.260
0.1572
3
0.680
0.0219
4
0.350
0.0078
Fig. 1
Transient thermal impedance junction-to case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 3 of 6
5STP 12N8500
On-state characteristic model:
VT
=
A
+
B
⋅
iT
+
C
⋅
ln(
iT
+
1)
+
D
⋅
IT
Valid for i
T
= 200 – 4000 A
A
1.9700e+0
B
-1.8000e-4
C
-3.0000e-1
D
6.2000e-2
Fig. 2
On-state characteristics.
T
j
=125°C, 10ms half sine
Fig. 3
Max. on-state voltage characteristics
T
case
(°C)
90
Double-sided cooling
85
DC
180° rectangular
180° sine
120° rectangular
80
75
70
0
200
400
600
800 1000 1200 1400 1600 1800
I
TAV
(A)
Fig. 4
On-state power dissipation vs. mean on-state
current. Turn-on losses excluded.
Doc. No. 5SYA1044-02 Nov. 04
Fig. 5
Max. permissible case temperature vs. mean
on-state current.
page 4 of 6
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 12N8500
5STP 12N8500
Fig. 6
Surge on-state current vs. pulse length. Half-
sine wave.
I
G
(t)
100 %
90 %
I
GM
I
GM
I
Gon
di
G
/dt
t
r
t
p
(I
GM
)
≈
2..5 A
≥
1.5 I
GT
≥
2 A/µs
≤
1
µs
≈
5...20
µs
Fig. 7
Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
di
G
/dt
10 %
t
r
t
p
(I
GM
)
t
p
(I
Gon
)
t
I
Gon
Fig. 8
Recommended gate current waveform.
Fig. 9
Max. peak gate power loss.
I
RM
(A)
400
300
I
TRM
= 2000 A
200
max
T
j
= T
jmax
min
10
2
90
80
70
5STP 12N8500
60
50
40
30
1
2
3
4
5 6 7 8 910
30
20
-di
T
/dt (A/µs)
Fig. 10
Recovery charge vs. decay rate of on-state
current.
Fig. 11
Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 5 of 6
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