5STP18H4200 datasheet, PDF - EEWORLD Datasheet

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5STP18H4200: DescriptionPhase Control Thyristor; CategoryAnalog mixed-signal IC Trigger device; File Size222KB，6 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5STP18H4200 Overview

Phase Control Thyristor

5STP18H4200 Parametric

Parameter Name	Attribute value
package instruction	DISK BUTTON, O-CEDB-X4
Reach Compliance Code	compli
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	1000 V/us
Maximum DC gate trigger current	400 mA
Maximum DC gate trigger voltage	2.6 V
Maximum holding current	80 mA
JESD-30 code	O-CEDB-X4
Maximum leakage current	300 mA
On-state non-repetitive peak current	35000 A
Number of components	1
Number of terminals	4
Maximum on-state current	2100000 A
Maximum operating temperature	125 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	3260 A
Off-state repetitive peak voltage	4200 V
Repeated peak reverse voltage	4200 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	END
Trigger device type	SCR
Base Number Matches	1

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DSM

TAVM

TRMS

TSM

4200 V

2075 A

3260 A

32000 A

0.96 V

0.285 mΩ

Ω

Phase Control Thyristor

5STP 18H4200

Doc. No. 5SYA1046-02 Jan. 02

•

Patented free-floating silicon technology

Low on-state and switching losses

Designed for traction, energy and industrial applications

Optimum power handling capability

Interdigitated amplifying gate

Blocking

Maximum rated values

Symbol

DRM,

RRM

RSM1

dV/dt

crit

Parameter

Conditions

f = 50 Hz, t

= 10ms

= 5ms, single pulse

Exp. to 0.67 x V

DRM

, T

= 125°C

5STP 18H4200 5STP 18H4000 5STP 18H3600

4200 V

4600 V

4000 V

4400 V

1000 V/µs

min

typ

max

300

Unit

3600 V

4000 V

Characteristic values

Symbol Conditions

DRM

RRM

DRM

, Tj = 125°C

RRM

, Tj = 125°C

Forwarde leakage current

Reverse leakage current

Mechanical data

Maximum rated values

Parameter

Mounting force

Acceleration

Characteristic values

Symbol Conditions

Device unclamped

Device clamped

min

typ

max

100

Unit

m/s

Unit

Parameter

Weight

Surface creepage distance

Air strike distance

Symbol Conditions

min

typ

0.9

max

Maximum Ratings are those values beyond which damage to the device may occur

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

5STP18H4200 Related Products

	5STP18H4200	5STP18H4000	5STP18H3600
Description	Phase Control Thyristor	Phase Control Thyristor	Phase Control Thyristor
package instruction	DISK BUTTON, O-CEDB-X4	DISK BUTTON, O-CEDB-X4	DISK BUTTON, O-CEDB-X4
Reach Compliance Code	compli	compli	compli
Configuration	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	1000 V/us	1000 V/us	1000 V/us
Maximum DC gate trigger current	400 mA	400 mA	400 mA
Maximum DC gate trigger voltage	2.6 V	2.6 V	2.6 V
Maximum holding current	80 mA	80 mA	80 mA
JESD-30 code	O-CEDB-X4	O-CEDB-X4	O-CEDB-X4
Maximum leakage current	300 mA	300 mA	300 mA
On-state non-repetitive peak current	35000 A	35000 A	35000 A
Number of components	1	1	1
Number of terminals	4	4	4
Maximum on-state current	2100000 A	2100000 A	2100000 A
Maximum operating temperature	125 °C	125 °C	125 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	3260 A	3260 A	3260 A
Off-state repetitive peak voltage	4200 V	4000 V	3600 V
Repeated peak reverse voltage	4200 V	4000 V	3600 V
surface mount	YES	YES	YES
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	END	END	END
Trigger device type	SCR	SCR	SCR
Base Number Matches	1	1	1

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