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5STP24H2200

Description
Phase Control Thyristor
CategoryAnalog mixed-signal IC    Trigger device   
File Size212KB,5 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric Compare View All

5STP24H2200 Overview

Phase Control Thyristor

5STP24H2200 Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CEDB-X4
Reach Compliance Codecompli
Nominal circuit commutation break time400 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current400 mA
Maximum DC gate trigger voltage2.6 V
Maximum holding current75 mA
JESD-30 codeO-CEDB-X4
On-state non-repetitive peak current43000 A
Number of components1
Number of terminals4
Maximum on-state current2630000 A
Maximum operating temperature125 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current4120 A
Off-state repetitive peak voltage2200 V
Repeated peak reverse voltage2200 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationEND
Trigger device typeSCR
Base Number Matches1
V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
2800 V
2625 A
4120 A
43000 A
0.85 V
0.160 mΩ
Phase Control Thyristor
5STP 24H2800
Doc. No. 5SYA1047-02 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Part Number
V
DRM
V
RSM1
I
DRM
I
RRM
dV/dt
crit
V
RRM
5STP 24H2800 5STP 24H2600 5STP 24H2200
Conditions
2800 V
3000 V
2600 V
2800 V
300 mA
300 mA
1000 V/µs
2200 V
2400 V
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
V
DRM
V
RRM
T
j
= 125°C
Exp. to 0.67 x V
DRM
, T
j
= 125°C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2
0.9 kg
36 mm
15 mm
50 kN
45 kN
60 kN
ABB Semiconductors AG reserves the right to change specifications without notice.

5STP24H2200 Related Products

5STP24H2200 5STP24H2600 5STP24H2800
Description Phase Control Thyristor Phase Control Thyristor Phase Control Thyristor
package instruction DISK BUTTON, O-CEDB-X4 DISK BUTTON, O-CEDB-X4 DISK BUTTON, O-XXDB-X3
Reach Compliance Code compli compli compli
Nominal circuit commutation break time 400 µs 400 µs 400 µs
Configuration SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 400 mA 400 mA 400 mA
Maximum DC gate trigger voltage 2.6 V 2.6 V 2.6 V
Maximum holding current 75 mA 75 mA 75 mA
JESD-30 code O-CEDB-X4 O-CEDB-X4 O-XXDB-X3
On-state non-repetitive peak current 43000 A 43000 A 43000 A
Number of components 1 1 1
Number of terminals 4 4 3
Maximum on-state current 2630000 A 2630000 A 2630000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 4120 A 4120 A 4120 A
Off-state repetitive peak voltage 2200 V 2600 V 2800 V
Repeated peak reverse voltage 2200 V 2600 V 2800 V
surface mount YES YES YES
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location END END UNSPECIFIED
Trigger device type SCR SCR SCR
Base Number Matches 1 1 1
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