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5STP26N5800

Description
Phase Control Thyristor
CategoryAnalog mixed-signal IC    Trigger device   
File Size315KB,6 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric Compare View All

5STP26N5800 Overview

Phase Control Thyristor

5STP26N5800 Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CEDB-X4
Reach Compliance Codecompli
ConfigurationSINGLE
Maximum DC gate trigger current400 mA
JESD-30 codeO-CEDB-X4
On-state non-repetitive peak current45000 A
Number of components1
Number of terminals4
Maximum on-state current2650000 A
Maximum operating temperature125 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current4410 A
Off-state repetitive peak voltage4900 V
Repeated peak reverse voltage4900 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationEND
Trigger device typeSCR
Base Number Matches1
V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
6500 V
2810 A
4410 A
45000 A
1.12 V
0.29 mΩ
Phase Control Thyristor
5STP 26N6500
Doc. No. 5SYA1001-03 Jan. 02
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
V
DSM,
V
RSM
V
DRM,
V
RRM
V
RSM1
dV/dt
crit
Parameter
Conditions
f = 5 Hz, t
p
= 10ms
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
Exp. to 0.67 x V
DRM
, T
j
= 125°C
5STP 26N6500 5STP 26N6200 5STP 26N5800
6500 V
5600 V
7000 V
6200 V
5300 V
6700 V
2000 V/µs
min
typ
max
600
600
Unit
mA
mA
5800 V
4900 V
6300 V
Characteristic values
Symbol Conditions
I
DSM
I
RSM
V
DSM
, T
j
= 125°C
V
RSM
, T
j
= 125°C
Forwarde leakage current
Reverse leakage current
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
j
= 110°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol Conditions
m
D
S
D
a
min
56
22
typ
2.9
max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

5STP26N5800 Related Products

5STP26N5800 5STP26N6500 5STP26N6200
Description Phase Control Thyristor Phase Control Thyristor Phase Control Thyristor
package instruction DISK BUTTON, O-CEDB-X4 DISK BUTTON, O-CEDB-X4 DISK BUTTON, O-CEDB-X4
Reach Compliance Code compli compli compli
Configuration SINGLE SINGLE SINGLE
Maximum DC gate trigger current 400 mA 400 mA 400 mA
JESD-30 code O-CEDB-X4 O-CEDB-X4 O-CEDB-X4
On-state non-repetitive peak current 45000 A 45000 A 45000 A
Number of components 1 1 1
Number of terminals 4 4 4
Maximum on-state current 2650000 A 2650000 A 2650000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 4410 A 4410 A 4410 A
Off-state repetitive peak voltage 4900 V 5600 V 5300 V
Repeated peak reverse voltage 4900 V 5600 V 5300 V
surface mount YES YES YES
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location END END END
Trigger device type SCR SCR SCR
Base Number Matches 1 1 1
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