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5STP27H1200

Description
Phase Control Thyristor
CategoryAnalog mixed-signal IC    Trigger device   
File Size221KB,6 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5STP27H1200 Overview

Phase Control Thyristor

5STP27H1200 Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CEDB-X4
Reach Compliance Codecompli
Nominal circuit commutation break time400 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current400 mA
Maximum DC gate trigger voltage2.6 V
Maximum holding current70 mA
JESD-30 codeO-CEDB-X4
On-state non-repetitive peak current47000 A
Number of components1
Number of terminals4
Maximum on-state current3000000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current4710 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationEND
Trigger device typeSCR
Base Number Matches1
V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
1800 V
3000 A
4710 A
47000 A
0.88 V
0.103 mΩ
Phase Control Thyristor
5STP 27H1800
Doc. No. 5SYA1048-02 Jan. 02
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol
V
DRM,
V
RRM
V
RSM1
dV/dt
crit
Parameter
Conditions
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
Exp. to 0.67 x V
DRM
, T
j
= 125°C
5STP 27H1800 5STP 27H1600 5STP 27H1200
1800 V
2000 V
1600 V
1800 V
1000 V/µs
min
typ
max
200
200
Unit
mA
mA
1200 V
1400 V
Characteristic values
Symbol Conditions
I
DRM
I
RRM
V
DRM
, Tj = 125°C
V
RRM
, Tj = 125°C
Forwarde leakage current
Reverse leakage current
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
45
typ
50
max
60
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol Conditions
m
D
S
D
a
min
36
15
typ
0.9
max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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