V
DRM
I
T(AV)M
I
T(RMS)
I
TSM
V
(T0)
r
T
=
=
=
=
=
=
1800
3108
4882
47×10
3
0.984
0.081
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 30H1801
Doc. No. 5SYA1066-01 March 05
•
•
•
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol
V
DRM,
V
RRM
dV/dt
crit
Parameter
Conditions
f = 50 Hz, t
p
= 10 ms
Exp. to 1210 V, T
vj
= 125°C
Symbol Conditions
I
DRM
I
RRM
5STP 30H1801 5STP 30H1601
1800 V
1600 V
1000 V/µs
min
typ
5STP 30H1401
1400 V
Characteristic values
max
200
200
Unit
mA
mA
Forward leakage current
Reverse leakage current
V
DRM
, T
vj
= 125°C
V
RRM
, T
vj
= 125°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
45
typ
50
max
55
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Symbol Conditions
m
D
S
min
36
typ
max
0.93
Air strike distance
D
a
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 30H1801
On-state
Maximum rated values
1)
Parameter
Average on-state current
RMS on-state current
Peak non-repetitive surge
current
Limiting load integral
Peak non-repetitive surge
current
Limiting load integral
Characteristic values
Symbol Conditions
I
T(AV)M
I
T(RMS)
I
TSM
It
I
TSM
It
Symbol Conditions
V
T
V
(T0)
r
T
I
H
I
L
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
I
T
= 4000 A, T
vj
= 125 °C
I
T
= 4000 A - 11500 A, T
vj
= 125 °C
2
2
min
typ
max
3108
4882
47×10
3
Unit
A
A
A
6
Half sine wave, T
c
= 70°C
tp = 10 ms, T
vj
= 125 °C,
V
D
= V
R
= 0 V
tp = 8.3 ms, T
vj
= 125 °C,
V
D
= V
R
= 0 V
11.05×10
50.2×10
A
2
s
A
A
2
s
Unit
V
V
mΩ
mA
mA
mA
mA
3
10.46×10
min
typ
max
1.3
0.984
0.081
170
90
1500
1000
6
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
Latching current
Switching
Maximum rated values
1)
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Symbol Conditions
di/dt
crit
di/dt
crit
T
vj
= 125 °C,
I
TRM
= A,
V
D
≤
1880 V,
I
FG
= 2 A, t
r
= 0.3 µs
Cont.
f = 50 Hz
Cont.
f = 1 Hz
min
typ
max
200
1000
Unit
A/µs
A/µs
µs
Circuit-commutated turn-off t
q
time
Characteristic values
T
vj
= 125°C, I
TRM
= 4000 A,
V
R
= 100 V, di
T
/dt = -12.5 A/µs,
V
D
≤
0.67⋅V
DRM
, dv
D
/dt = 50V/µs
min
200
Parameter
Recovery charge
Symbol Conditions
Q
rr
T
vj
= 125°C, I
TRM
= 4000 A,
V
R
= 100 V,
di
T
/dt = -12.5 A/µs
V
D
= 0.4⋅V
RM
, I
FG
= 2 A,
t
r
= 0.3 µs, T
vj
= 25 °C
typ
2800
max
Unit
µAs
Gate turn-on delay time
t
gd
2
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1066-01 March 05
page 2 of 6
5STP 30H1801
Triggering
Maximum rated values
1)
Parameter
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Mean forward gate power
Characteristic values
Symbol Conditions
V
FGM
I
FGM
V
RGM
P
G(AV)
Symbol Conditions
V
GT
T
vj
= -40 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
typ
max
12
10
10
5
Unit
V
A
V
W
Unit
V
Parameter
Gate-trigger voltage
min
typ
max
4
3
0.25
2
500
250
mA
Gate-trigger current
I
GT
T
vj
= -40 °C
T
vj
= 25 °C
T
vj
= 125 °C
10
150
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
-40
-40
min
typ
max
125
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 45...55 kN
Anode-side cooled
F
m
= 45...55 kN
Cathode-side cooled
F
m
= 45...55 kN
Double-side cooled
F
m
= 45...55 kN
Single-side cooled
F
m
= 45...55 kN
typ
max
10
16
26.5
3
6
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
-t/
τ
i
)
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
6.730
0.4871
2
1.440
0.1468
3
0.650
0.0677
4
1.160
0.0079
Fig. 1
Transient thermal impedance junction-to case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1066-01 March 05
page 3 of 6
5STP 30H1801
I
T
( A )
I
TSM
( kA )
20000
18000
16000
14000
12000
10000
I
TSM
70
65
60
55
50
2
∫
i dt
15
14
13
12
11
10
9
8
7
100
8000
6000
4000
2000
0
0
0,5
1
1,5
2
2,5
3
V
T
( V )
30
1
10
t ( ms )
45
40
35
Fig. 2
Max. on-state voltage characteristics
7
Fig. 3
Surge forward current vs. pulse length. Half
sine wave, single pulse, V
R
= 0 V
V
G
( V )
14
V
FGM
V
G
( V )
6
DC = P
GAVm
12
5
-40 °C
10
500µs
1ms
4
+25 °C
8
2
I
GTmin
+125 °C
4
1
V
GTmin
2
10ms
DC = P
GAVm
0
0
0
0,5
1
0
I
G
( A )
2
4
6
8
10
I
FGM
3
6
12
I
G
( A )
Fig. 4
Gate trigger characteristics
Fig. 5
Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1066-01 March 05
page 4 of 6
i
2
dt
(10
6
A
2
s)
22000
25°C
125°C
75
16
5STP 30H1801
P
T
( W )
6000
P
T
( W )
ψ
= 30° 60° 90° 120° 180°
6000
ψ
= 30°
60° 90° 120°
180°
270°
5000
5000
DC
4000
4000
DC
3000
3000
2000
2000
1000
1000
0
0
1000
2000
3000
0
0
1000
2000
3000
I
TAV
( A )
I
TAV
( A )
Fig. 6
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
T
C
( °C )
130
Fig. 7
Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
T
C
( °C )
130
120
120
110
110
100
100
90
90
80
DC
80
DC
270°
70
70
60
0
ψ
= 30° 60°
1000
90° 120°
180°
60
3000
0
ψ
= 30°
1000
60° 90° 120° 180°
2000
3000
2000
I
TAV
( A )
I
TAV
( A )
Fig. 8
Max. case temperature vs.average forward
current, sine waveform, f = 50Hz, T = 1/f
Fig. 9
Max. case temperature vs.average forward
current, square waveform, f = 50Hz, T = 1/f
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1066-01 March 05
page 5 of 6
Microcontroller MCU
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