V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
4200 V
3960 A
6230 A
60000 A
0.95 V
0.13 mΩ
Ω
Phase Control Thyristor
5STP 38N4200
Doc. No. 5SYA1012-03 Jan. 02
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Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
V
DRM,
V
RRM
V
RSM1
dV/dt
crit
Parameter
Conditions
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
Exp. to 0.67 x V
DRM
, T
j
= 125°C
5STP 38N4200 5STP 38N4000 5STP 38N3600
4200 V
4600 V
4000 V
4400 V
2000 V/µs
min
typ
max
400
400
Unit
mA
mA
3600 V
4000 V
Characteristic values
Symbol Conditions
I
DRM
I
RRM
V
DRM
, Tj = 125°C
V
RRM
, Tj = 125°C
Forwarde leakage current
Reverse leakage current
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol Conditions
m
D
S
D
a
min
56
22
typ
2.9
max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 38N4200
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
TAVM
I
TRMS
I
TSM
It
I
TSM
It
2
2
min
typ
max
3960
6230
Unit
A
A
A
kA
2
s
A
kA
2
s
Unit
V
V
mΩ
mA
mA
mA
mA
Half sine wave, T
c
= 70°C
tp = 10 ms, Tj = 125°C,
V
D
=V
R
= 0 V
tp = 8.3 ms, Tj = 125°C,
V
D
=V
R
=0 V
min
typ
60000
18000
65000
17500
max
1.35
0.95
0.13
100
75
500
350
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
Latching current
Symbol Conditions
V
T
V
T0
r
T
I
H
I
L
I
T
= 3000 A, T
j
= 125°C
I
T
= 2500 A - 7500 A, T
j
= 125°C
Tj = 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Switching
Maximum rated values
1)
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Symbol Conditions
di/dt
crit
di/dt
crit
Cont.
T
j
= 125°C, I
TRM
= 5000 A, f = 50 Hz
V
D
≤
0.67⋅V
DRM
,
Cont.
I
FG
= 2 A, t
r
= 0.5 µs
f = 1Hz
T
j
= 125°C, I
TRM
= 5000 A,
V
R
= 200 V, di
T
/dt = -5 A/µs,
V
D
≤
0.67⋅V
DRM
, dv
D
/dt = 20 V/µs,
min
typ
max
250
1000
Unit
A/µs
A/µs
µs
Circuit-commutated turn-off t
q
time
Characteristic values
600
Parameter
Recovery charge
Delay time
Symbol Conditions
Q
rr
t
d
T
j
= 125°C, I
TRM
= 5000 A,
V
R
= 200 V, di
T
/dt = -5 A/µs
V
D
= 0.4⋅V
DRM
, I
FG
= 2 A, t
r
= 0.5 µs
min
5000
typ
max
10000
3
Unit
µAs
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02
page 2 of 6
5STP 38N4200
Triggering
Maximum rated values
1)
Parameter
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Gate power loss
Average gate power loss
Characteristic values
Symbol Conditions
V
FGM
I
FGM
V
RGM
P
G
P
GAV
Symbol Conditions
V
GT
I
GT
V
GD
I
GD
T
j
= 25°C
T
j
= 25°C
V
D
= 0.4 x V
DRM
, T
vjmax
= 125°C
V
D
= 0.4 x V
DRM
, T
vjmax
= 125°C
For DC gate current
min
typ
max
12
10
10
3
Unit
V
A
V
W
see Fig. 9
min
typ
max
2.6
400
0.3
10
Unit
V
mA
V
mA
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
j
min
typ
max
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double side cooled
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
-40
min
typ
140
max
5.7
11.4
11.4
1
2
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
thJC
(t) =
å
R
i
(1 - e
i
=
1
i
R
i
(K/kW)
τ
i
(s)
1
3.4
0.8685
2
1.26
0.1572
3
0.68
n
- t/
τ
i
)
4
0.35
0.0078
Fig. 1
Transient thermal impedance junction-to case.
0.0219
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02
page 3 of 6
5STP 38N4200
On-state characteristic model:
VT
=
A
+
B
⋅
iT
+
C
⋅
ln(
iT
+
1)
+
D
⋅
IT
Valid for i
T
= 500 – 14000 A
A
3.4173e-1
B
9.0000e-5
C
7.6280e-2
D
2.3100e-3
Fig. 2
On-state characteristics.
T
j
=125°C, 10ms half sine
Fig. 3
On-state characteristics.
Fig. 4
On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5
Max. permissible case temperature vs.
mean on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02
page 4 of 6
5STP 38N4200
Fig. 6
Surge on-state current vs. pulse length. Half-
sine wave.
I
G
(t)
100 %
90 %
I
GM
I
GM
I
Gon
di
G
/dt
t
r
t
p
(I
GM
)
≈
2..5 A
≥
1.5 I
GT
≥
2 A/µs
≤
1
µs
≈
5...20µs
Fig. 7
Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
di
G
/dt
10 %
t
r
t
p
(I
GM
)
t
p
(I
Gon
)
t
I
Gon
Fig. 8
Recommendet gate current waveform.
Fig. 9
Max. peak gate power loss.
Fig. 10
Recovery charge vs. decay rate of on-state
current.
Fig. 11
Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02
page 5 of 6
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