DATA SHEET
SILICON TRANSISTOR
2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR
(DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SA1714 is a high-speed darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse mortors or blushless mortor of OA and FA equipment.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High DC current amplifiers due to darlington connection
• Large current capacitance and low V
CE(sat)
• TO-126 power transistor with high power dissipation
• Complementary transistor with 2SC4342
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Fin (collector)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Ta = 25°C)
P
T
(Tc = 25°C)
T
j
T
stg
Ratings
−100
−100
−8.0
–
+3.0
–
+6.0
−0.3
1.3
12
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
* PW
≤
10 ms, duty cycle
≤
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16124EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1714
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Symbol
V
CEO(SUS)
I
CBO
I
CEO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
BE(sat)
**
t
on
t
stg
t
f
Conditions
I
C
=
−3.0
A, I
B
=
−3.0
mA, L = 1.0 mH
V
CB
=
−100
V, I
E
= 0
V
CE
=
−100
V, R
BE
=
∞
V
CE
=
−2.0
V, I
C
=
−1.5
A
V
CE
=
−2.0
V, I
C
=
−3.0
A
I
C
=
−1.5
A, I
B
=
−1.5
mA
I
C
=
−1.5
A, I
B
=
−1.5
mA
I
C
=
−1.5
A, I
B1
=
−I
B2
=
−1.5
mA,
R
L
= 33
Ω,
V
CC
≅ −50
V
Refer to the test circuit.
0.6
2,000
1,000
−0.9
−1.5
0.15
1.2
−1.2
−2.0
MIN.
−100
−10
−10
20,000
TYP.
MAX.
Unit
V
µ
A
µ
A
−
−
V
V
µ
s
µ
s
µ
s
** Pulse test PW
≤
350
µ
s, duty cycle
≤
2%/pulsed
h
FE
CLASSIFICATION
Marking
h
FE1
M
2,000 to 5,000
L
4,000 to 10,000
K
8,000 to 20,000
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D16124EJ1V0DS
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