Ordering number : ENA0445
3HP04MH
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
3HP04MH
Features
•
General-Purpose Switching Device
Applications
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
2
!0.8mm)
Conditions
Ratings
-
-30
±20
--200
--800
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=
-
1mA, VGS=0V
-
VDS=
--
30V, VGS=0V
VGS=±16V, VDS=0V
VDS=
--
10V, ID=
--
100µA
VDS=
--
10V, ID=
-
100mA
-
ID=
-
100mA, VGS=
--
10V
-
ID=
-
50mA, VGS=
--
4V
-
VDS=
--
10V, f=1MHz
VDS=
--
10V, f=1MHz
VDS=
--
10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
max
Unit
V
--
30
--
1
±10
µA
µA
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
--
1.2
150
250
1.4
2.8
22
6.0
3.5
34
59
435
250
--
2.6
1.9
4.0
Marking : WZ
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006PE MS IM TB-00002268 No. A0455-1/4
3HP04MH
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=
--
10V, VGS=
--
10V, ID=
-
200mA
-
VDS=
--
10V, VGS=
--
10V, ID=
-
200mA
-
VDS=
--
10V, VGS=
--
10V, ID=
-
200mA
-
IS=
--
200mA, VGS=0V
Ratings
min
typ
1.6
0.5
0.1
max
Unit
nC
nC
nC
--
0.86
-
1.2
-
V
Package Dimensions
unit : mm
7019A-003
Switching Time Test Circuit
VIN
VDD= --15V
2.0
0.25
0.15
0V
--10V
VIN
ID= --100mA
RL=150Ω
3
2.1
1.6
0 to 0.02
PW=10µs
D.C.≤1%
D
VOUT
1
0.25
2
0.3
P.G
G
Rg
0.65
3HP04MH
50Ω
0.85
S
0.07
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Rg=5kΩ
-
--6.
-8.0V
0V
--4
.0V
--200
ID -- VDS
0V
--10.0V
--200
ID -- VGS
VDS=
--10V
--180
--160
--180
--160
Drain Current, ID -- mA
Drain Current, ID -- mA
--140
--120
--100
--80
--60
--40
--20
0
0
--0.1
--15
.
--140
--120
--100
--80
--60
--40
--2.5V
2
5
°
C
5
°
C
0
--0.5
--1.0
--1.5
VGS= --2.0V
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--20
0
Ta=
7
--2.0
--25
°
C
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
10
9
8
7
6
5
IT11209
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
6
IT11210
RDS(on) -- Ta
Ta=25
°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
4
3
--100mA
4
3
2
1
0
0
--2
--4
--6
--8
--10
--12
--14
--16
I D=
--4
S=
A, VG
--50m
V
2
ID= --50mA
I
D=
1
= --10V
mA, V
GS
--100
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT11211
Ambient Temperature, Ta --
°C
IT11212
No. A0445-2/4
3HP04MH
7
y
fs -- ID
VDS=
--10V
Forward Transfer Admittance,
y
fs -- mS
5
3
2
--1.0
7
5
3
2
IS -- VSD
VGS=0V
100
7
5
3
2
Ta=
75
°
C
--0.001
7
5
3
2
--0.4
--0.6
--0.8
--1.0
--1.2
IT11214
10
--0.001
2
3
5 7 --0.01
2
3
5 7 --0.1
2
3
Drain Current, ID -- A
1000
7
5 7 --1.0
IT11213
--0.0001
--0.2
SW Time -- ID
td(off)
VDD=
--
15V
VGS=
--
10V
5
3
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
3
2
tf
Ciss, Coss, Crss -- pF
2
10
7
5
3
2
100
7
5
Coss
tr
td(on)
Crss
3
2
--0.01
1.0
2
3
5
7
--0.1
2
3
5
7
0
--5
--10
--15
--20
--25
--30
IT11216
Drain Current, ID -- A
--10
--9
IT11215
2
--1.0
7
5
3
2
--0.1
7
5
3
2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --200mA
--25
°
C
25
°
C
C
5
°
--2
=
Ta
°
C
75
°
C
25
Source Current, IS -- A
--0.1
7
5
3
2
--0.01
7
5
3
2
IDP= --800mA
--8
--7
--6
--5
--4
--3
--2
--1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain Current, ID -- A
ID= --200mA
D
C
10
0
≤10µs
1m
s
10
m
s
op
er
m
s
at
io
n
Operation in this
area is limited by RDS(on).
(T
a=
25
°
C
)
--0.01
--0.1
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
!0.8mm)
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
Total Gate Charge, Qg -- nC
0.7
IT11217
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT11218
Allowable Power Dissipation, PD -- W
0.6
M
0.5
ou
n
ted
on
0.4
ac
er
am
ic
0.3
bo
a
rd
(9
00
m
0.2
m
2
!
0.
8m
0.1
0
0
20
40
60
80
100
120
m
)
160
140
Ambient Temperature, Ta --
°C
IT11219
No. A0455-3/4
3HP04MH
Note on usage : Since the 3HP04MH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0445-4/4
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