DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF857; BF858; BF859
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors
Product specification
NPN high-voltage transistors
DESCRIPTION
NPN transistors in a TO-202 plastic package.
An A-version with e-b-c pinning instead of e-c-b is
available on request.
APPLICATIONS
•
For use in video output stages of black and white and
colour television receivers.
PINNING
PIN
1
2
3
emitter
collector, connected to mounting base
base
Fig.1
DESCRIPTION
1
2
handbook, halfpage
BF857; BF858; BF859
3
MBH794
Simplified outline (TO-202) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BF857
BF858
BF859
V
CEO
collector-emitter voltage
BF857
BF858
BF859
I
CM
P
tot
h
FE
C
re
f
T
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
T
mb
≤
75
°C
I
C
= 30 mA; V
CE
= 10 V
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 100 MHz
open base
−
−
−
−
−
26
−
90
160
250
300
300
6
−
3
−
pF
MHz
V
V
V
mA
W
open emitter
−
−
−
160
250
300
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
1996 Dec 09
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BF857
BF858
BF859
V
CEO
collector-emitter voltage
BF857
BF858
BF859
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
T
mb
≤
75
°C
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BF857; BF858; BF859
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
160
250
300
160
250
300
5
100
300
100
2
6
+150
150
+150
UNIT
V
V
V
V
V
V
V
mA
mA
mA
W
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
62.5
12.5
UNIT
K/W
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CBO
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
BF857
collector cut-off current
BF858
collector cut-off current
BF859
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
I
C
= 0; V
EB
= 5 V
I
C
= 30 mA; V
CE
= 10 V
I
C
= 30 mA; I
B
= 6 mA
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 100 MHz
I
E
= 0; V
CB
= 250 V
−
−
26
−
−
90
0.1
100
−
1
3
−
V
pF
MHz
µA
nA
I
E
= 0; V
CB
= 200 V
−
0.1
µA
PARAMETER
collector cut-off current
CONDITIONS
I
E
= 0; V
CB
= 100 V
−
0.1
µA
MIN.
MAX.
UNIT
1996 Dec 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE
BF857; BF858; BF859
handbook, full pagewidth
10.4 max
3.8
3.6
3.8
0.56 max
24.2
max
8.6
max
2.5 max
(1)
2.4 max
12.2
min
1
2
3
0.8 (3x)
0.6
2.54
2.54
0.65 max
1.6
4.6
max
10
MGA322
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-202.
1996 Dec 09
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
BF857; BF858; BF859
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 09
5
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