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3RUS2

Description
1.25 A, 1200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size83KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
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3RUS2 Overview

1.25 A, 1200 V, SILICON, RECTIFIER DIODE

3RUS2 3RUS4
HIGH VOLTAGE, HIGH CURRENT
ULTRA-FAST RECOVERY
SILICON RECTIFIER DIODES
PRV
TYPE
1200
3RUS2120
3RUS4120
1500
3RUS2150
3RUS4150
1800
3RUS2180
3RUS4180
ELECTRICAL CHARACTERISTICS(at T
A
=25
o
C Unless Otherwise
Type
Avg. Rectified Forward Current @ 50 Amb., I
O
(Fig.1)
Avg.Output Current @ 80 C lead temperature
Lead Temp-measured
3 8
from body of diode
Max. Reverse Current @ PRV and 25 C, I
R
Max. Reverse Current @ PRV and 100 C, I
R
Max.Forward V oltage Drop @ 25
o
C ,2.0Amps
,
V
F
Max. Peak Surge Current,I
FSM
(8.3
ms)
(Fig.2)
Operating Temp Range
Storage T emp Range
Reverse Recovery Time, t
rr
o
 
 
Specified)
3RUS4
1.50 Amp
2.5 Amp
5
100
4V.
300A
3RUS2
o
1.25 Amp
2.0 Amp
5
o
o
A
A
A
50
A
Max
4V.
100A
-65
o
C to +150
o
C
-65 C to +150 C
50 nanosec
o
o
Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250
o
C
EDI reserves the right to change these specifications at any time without notice.
NOTE:

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