MITSUBISHI <INTELLIGENT POWER MODULES>
PM25RLB120
FLAT-BASE TYPE
INSULATED PACKAGE
PM25RLB120
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical V
ce
(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) Current rating of brake part increased.
60% for the current rating of inverter part.
• 3φ 25A, 1200V Current-sense IGBT type inverter
• 15A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 3.7kW class inverter application
• UL Recognized
Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
120
7
19.75
3.25
16
3-2
106
±0.25
66.5
Dimensions in mm
17
16
3-2
16
3-2
15.25
2-φ5.5
6-2
MOUNTING HOLES
1
16
1.5
1.5
3
4 4
25.75
55
N
35
1
P
5
9
13
19
4 4
B
U
V
W
25
4 4
2.5
19.5
22
7.75
23
4 4
4 4
4 4
4-
φ
2
.
1
2-φ2.5
9.5
5
23
98.25
23
Terminal code
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
VUPC
UFO
UP
VUP1
VVPC
VFO
VP
VVP1
VWPC
WFO
11.
12.
13.
14.
15.
16.
17.
18.
19.
WP
VWP1
VNC
VN1
Br
UN
VN
WN
Fo
19-s0.5
11.5
27.5
9.5
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25RLB120
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Br Fo
1.5k
V
NC
W
N
V
N1
V
N
U
N
W
P
V
WP1
V
WPC
WF
O
V
P
V
VPC
V
VP1
VF
O
U
P
V
UPC
V
UP1
UF
O
1.5k
1.5k
1.5k
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
B
N
W
V
U
P
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CES
±I
C
±I
CP
P
C
T
j
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
Condition
V
D
= 15V, V
CIN
= 15V
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Ratings
1200
25
50
150
–20 ~ +150
Unit
V
A
A
W
°C
(Note-1)
BRAKE PART
Symbol
V
CES
I
C
I
CP
P
C
V
R(DC)
I
F
T
j
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Rated DC Reverse Voltage
FWDi Forward Current
Junction Temperature
Condition
V
D
= 15V, V
CIN
= 15V
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Ratings
1200
15
30
130
1200
15
–20 ~ +150
Unit
V
A
A
W
V
A
°C
(Note-1)
CONTROL PART
Symbol
V
D
V
CIN
V
FO
I
FO
Parameter
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Condition
Applied between : V
UP1
-V
UPC
V
VP1
-V
VPC
, V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC
W
P
-V
WPC
, U
N
• V
N
• W
N
• B
r
-V
NC
Applied between : U
FO
-V
UPC
, V
FO
-V
VPC
, W
FO
-V
WPC
F
O
-V
NC
Sink current at U
FO
, V
FO
, W
FO
, F
O
terminals
Ratings
20
20
20
20
Unit
V
V
V
mA
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25RLB120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Parameter
Supply Voltage Protected by
V
CC(PROT)
SC
V
CC(surge)
Supply Voltage (Surge)
Storage Temperature
T
stg
Isolation Voltage
V
iso
Symbol
Condition
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Ratings
800
1000
–40 ~ +125
2500
Unit
V
V
°C
V
rms
THERMAL RESISTANCES
Symbol
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Parameter
Junction to case Thermal
Resistances
Condition
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Brake IGBT
Brake FWDi
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-1)
(Note-1)
(Note-1)
Min.
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
Max.
0.83*
1.36*
0.96*
1.82*
0.038
Unit
°C/W
Contact Thermal Resistance
* If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-1) T
C
(under the chip) measurement point is below.
arm
axis
X
Y
UP
IGBT FWDi
29.0
29.3
–7.1
1.5
VP
IGBT FWDi
65.0
65.5
–7.1
2.0
WP
IGBT FWDi
85.6
85.9
–7.1
2.0
UN
IGBT FWDi
37.8
37.5
5.1
–4.5
VN
IGBT FWDi
55.2
55.7
5.1
–4.5
WN
IGBT FWDi
75.8
75.3
5.1
–4.5
(Unit : mm)
Br
IGBT
19.0
–7.3
FWDi
22.3
6.6
Bottom view
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CE(sat)
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
I
CES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Condition
V
D
= 15V, I
C
= 25A
(Fig. 1)
V
CIN
= 0V
–I
C
= 25A, V
D
= 15V, V
CIN
= 15V
V
D
= 15V, V
CIN
= 0V↔15V
V
CC
= 600V, I
C
= 25A
T
j
= 125°C
Inductive Load
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
T
j
= 25°C
T
j
= 125°C
(Fig. 2)
Min.
—
—
—
0.5
—
—
—
—
—
—
Limits
Typ.
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
—
Max.
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
1
10
Unit
V
V
Switching Time
µs
(Fig. 3,4)
T
j
= 25°C
T
j
= 125°C
Collector-Emitter
Cutoff Current
mA
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25RLB120
FLAT-BASE TYPE
INSULATED PACKAGE
BRAKE PART
Symbol
V
CE(sat)
V
FM
I
CES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
V
D
= 15V, I
C
= 15A
V
CIN
= 0V
I
F
= 15A
V
CE
= V
CES
, V
CIN
= 15V
Condition
T
j
= 25°C
T
j
= 125°C
(Fig. 2)
T
j
= 25°C
T
j
= 125°C
Min.
—
—
—
—
—
Limits
Typ.
1.8
1.9
2.5
—
—
Max.
2.3
2.4
3.5
1
10
Unit
V
V
mA
(Fig. 1)
(Fig. 5)
CONTROL PART
Symbol
I
D
V
th(ON)
V
th(OFF)
SC
t
off(SC)
OT
OT
r
UV
UV
r
I
FO(H)
I
FO(L)
t
FO
Parameter
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Over Temperature Protection
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
V
D
= 15V, V
CIN
= 15V
Condition
V
N1
-V
NC
V
*P1
-V
*PC
Min.
—
—
1.2
1.7
50
30
—
135
—
11.5
—
—
—
1.0
Limits
Typ.
20
5
1.5
2.0
—
—
0.2
145
125
12.0
12.5
—
10
1.8
Max.
30
10
1.8
2.3
—
—
—
—
—
12.5
—
0.01
15
—
Unit
mA
V
A
µs
°C
V
mA
ms
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
• V
N
• W
N
• B
r
-V
NC
Inverter part
–20
≤
T
j
≤
125°C, V
D
= 15V (Fig. 3,6)
Brake part
V
D
= 15V
V
D
= 15V
Detect T
j
of IGBT chip
–20
≤
T
j
≤
125°C
V
D
= 15V, V
FO
= 15V
V
D
= 15V
(Fig. 3,6)
Trip level
Reset level
Trip level
Reset level
(Note-2)
(Note-2)
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol
—
—
Parameter
Mounting torque
Weight
Mounting part
—
Condition
screw : M5
Min.
2.5
—
Limits
Typ.
3.0
340
Max.
3.5
—
Unit
N•m
g
RECOMMENDED CONDITIONS FOR USE
Symbol
V
CC
V
D
V
CIN(ON)
V
CIN(OFF)
f
PWM
t
dead
Parameter
Supply Voltage
Control Supply Voltage
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Blocking Time
Condition
Applied across P-N terminals
Applied between : V
UP1
-V
UPC
, V
VP1
-V
VPC
V
WP1
-V
WPC
, V
N1
-V
NC
(Note-3)
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
• V
N
• W
N
• B
r
-V
NC
Using Application Circuit of Fig. 8
For IPM’s each input signals
(Fig. 7)
Recommended value
≤
800
15.0
±
1.5
≤
0.8
≥
9.0
≤
20
≥
2.5
Unit
V
V
V
kHz
µs
(Note-3) With ripple satisfying the following conditions: dv/dt swing
≤ ±5V/µs,
Variation
≤
2V peak to peak
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25RLB120
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (V
D
), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above V
CES
rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
IN
Fo
IN
Fo
P, (U,V,W)
V
CIN
(0V)
V
Ic
V
CIN
(15V)
V
–
Ic
V
D
(all)
U,V,W, (N)
V
D
(all)
U,V,W,B, (N)
Fig. 1 V
CE(sat)
Test
Fig. 2 V
EC
, (V
FM
) Test
a) Lower Arm Switching
P
V
CIN
(15V)
V
CIN
Signal input
(Upper Arm)
Signal input
(Lower Arm)
Fo
Fo
U,V,W
trr
Irr
C
S
V
CE
Ic
90%
Vcc
90%
N
b) Upper Arm Switching
V
CIN
Signal input
(Upper Arm)
Signal input
(Lower Arm)
V
D
(all)
P
Ic
10%
10%
tc (on)
10%
tc (off)
10%
Fo
U,V,W
V
CIN
C
S
Vcc
td (on)
tr
td (off)
tf
V
CIN
(15V)
Fo
(ton= td (on) + tr)
N
(toff= td (off) + tf)
V
D
(all)
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
V
CIN
Short Circuit Current
P, (U,V,W,B)
A
IN
Fo
Constant Current
SC
Pulse
V
CE
V
CIN
(15V)
Ic
V
D
(all)
U,V,W, (N)
Fo
toff(SC)
Fig. 5 I
CES
Test
Fig. 6 SC test waveform
IPM’ input signal V
CIN
(Upper Arm)
0V
IPM’ input signal V
CIN
(Lower Arm)
1.5V
2V
1.5V
t
0V
2V
1.5V
2V
t
t
dead
t
dead
t
dead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2005
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