VN0645
VN0650
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
450V
500V
†
MIL visual screening available
R
DS(ON)
(max)
16Ω
16Ω
I
D(ON)
(min)
0.5A
0.5A
Order Number / Package
TO-39
VN0645N2
—
TO-92
—
VN0650N3
Die
†
—
VN0650ND
7
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Advanced DMOS Technology
The VN0650 is NOT recommended for new designs. Please
use VN2450 instead.
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
s
Free from secondary breakdown
s
Low power drive requirement
s
Ease of paralleling
s
Low C
ISS
and fast switching speeds
s
Excellent thermal stability
s
Integral Source-Drain diode
s
High input impedance and high gain
s
Complementary N- and P-channel devices
Applications
s
Motor controls
s
Converters
s
Amplifiers
s
Switches
s
Power supply circuits
s
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
7-175
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
DGS
TO-39
Case: DRAIN
SGD
TO-92
Note: See Package Outline section for dimensions.
VN0645/VN0650
Thermal Characteristics
Package
TO-39
TO-92
I
D
(continuous)*
0.4A
0.2A
I
D
(pulsed)
1.5A
1.0A
Power Dissipation
@ T
C
= 25
°
C
6W
1W
θ
jc
°
C/W
21
125
θ
ja
°
C/W
125
170
I
DR
*
0.4A
0.2A
I
DRM
1.5A
1.0A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
VN0650
VN0645
Min
500
450
2
4
-4.5
100
10
1
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
0.5
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
300
100
120
20
10
130
75
20
10
10
20
10
1.8
V
ns
V
GS
= 0V, I
SD
= 0.4A
V
GS
= 0V, I
SD
= 0.4A
ns
V
DD
= 25V,
I
D
= 0.5A,
R
GEN
= 25Ω
pF
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
0.8
1.1
12
11
16
0.75
V
mV/°C
nA
µA
mA
Typ
Max
Unit
V
Conditions
V
GS
= 0V, I
D
= 2mA
V
GS
= V
DS
, I
D
= 2mA
V
GS
= V
DS
, I
D
= 2mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 100mA
V
GS
= 10V, I
D
= 400mA
V
GS
= 10V, I
D
= 400mA
V
DS
= 25V, I
D
= 400mA
A
Ω
%/°C
m
Ω
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
10%
t
(ON)
t
d(ON)
V
DD
OUTPUT
0V
90%
90%
t
r
t
(OFF)
t
d(OFF)
t
F
PULSE
GENERATOR
R
gen
V
DD
R
L
OUTPUT
D.U.T.
10%
10%
INPUT
7-176
VN0645/VN0650
Typical Performance Curves
Output Characteristics
2.0
1.0
Saturation Characteristics
VGS = 6V to 10V
I
D
(amperes)
VGS = 6V to 10V
I
D
(amperes)
1.0
5V
0.5
4V
4V
3V
0
0
10
20
30
40
50
0
0
2
4
6
8
3V
10
7
V
DS
(volts)
Transconductance vs. Drain Current
0.3
50
V
DS
(volts)
Power Dissipation vs. Case Temperature
V
DS
= 25V
T
A
= -55°C
0.24
40
G
FS
(siemens)
T
A
= 25°C
T
A
= 150°C
0.12
P
D
(watts)
0.18
30
20
0.06
10
TO-39
TO-92
0
0
0.2
0.4
0.6
0.8
1.0
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
1.0
T
C
(°C)
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-39 (pulsed)
0.8
I
D
(amperes)
1.0
0.6
TO-39 (DC)
0.4
TO-39
P
D
= 6W
T
C
= 25°C
0.1
TO-92 (DC)
0.2
TC = 25°C
0.01
1
10
100
1000
0
0.001
0.01
0.1
TO-92
P
D
= 1W
T
C
= 25°C
1
10
V
DS
(volts)
t
p
(seconds)
7-177
VN0645/VN0650
Typical Performance Curves
BV
DSS
Variation with Temperature
30
1.1
24
On-Resistance vs. Drain Current
V
GS
= 5V
V
GS
= 10V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
-50
0
50
100
150
18
1.0
12
6
0.9
0
0
0.3
0.6
0.9
1.2
1.5
T
j
(°C)
Transfer Characteristics
1.0
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.0
1.4
V
DS
= 25V
25°C
R
DS
@ 10V, 400mA
1.6
1.2
1.2
1.0
0.8
0.8
I
D
(amperes)
150°C
0.5
V
(th)
@ 2mA
0.6
0
0
2
4
6
8
10
-50
0
50
100
0.4
0
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
150
V
DS
= 10V
C (picofarads)
V
GS
(volts)
V
DS
= 40V
6
C
ISS
100
179 pF
4
50
C
OSS
C
RSS
0
0
10
20
30
40
2
110 pF
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
7-178
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
T
A
= -55°C
Microcontroller MCU
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