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PD8932

Description
InGaAs AVALANCHE PHOTO DIODES
CategoryLED optoelectronic/LED    photoelectric   
File Size60KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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PD8932 Overview

InGaAs AVALANCHE PHOTO DIODES

PD8932 Parametric

Parameter NameAttribute value
MakerMitsubishi
Reach Compliance Codeunknow
Other featuresLOW NOISE
ConfigurationSINGLE
Maximum dark power100 nA
Infrared rangeYES
Nominal photocurrent2 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesAVALANCHE PHOTODIODE
peak wavelength1000 nm
Maximum response time3e-10 s
Minimum reverse breakdown voltage40 V
Maximum reverse voltage90 V
Semiconductor materialInGaAs
shapeRECTANGULAR
surface mountNO
MITSUBISHI PHOTO DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
PD8042, PD8932, PD893D2
DESCRIPTION
PD8XX2 Series are InGaAs avalanche photodiodes
which has a sensitive area of
φ50µm.
PD8XX2 is suitable for receiving the light having
a wavelength band of 1000 to 1600nm.
This photodiode features high-speed response and
a high responsivity, and is suitable for the
light receiving elements for optical fiber
communication systems.
Feature
φ50µm
active diameter
1000~1600nm wavelength band
Small dark current
Low noise
High responsivity
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS <*1>
Symbol
Ir
If
Tc
Tstg
Parameter
Reverse current
Forward curent
Case temperature
Storage temperature
Conditions
-
-
-
-
Ratings
500
2
-40 ~ +85
-40 ~ +100
Unit
µA
mA
C
C
Note1: The maximum rating means the limitation over which the device should not be operated
even instant time, and this does not mean the guarantee of its lifetime.
As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor
Quality Assurance Department.
ELECTRICAL / OPTICAL CHARACTERISTICS
(Tc=25 C)
Symbol
VBR
Id
R
Ct
fc
Parameter
Break-down voltage
Dark current
Responsivity
Capacitance
Cut-off frequency
Id=100µA
Vr=0.9VBR
M=1,
λ=1300nm
Vr=0.9VBR, f=1MHz
M=10,
λ=1300nm,
RL=50Ω, -3dB
Test conditions
Limits
Min.
40
-
-
-
1.0
Typ.
60
60
0.8
0.4
*1
2.5
Max.
90
100
-
0.9
-
Unit
V
nA
A/W
pF
GHz
*1 Applied to PD8932: Ct=0.5pF(typ.), PD8042: Ct=0.7pF(typ.)
MITSUBISHI ELECTRIC
As of Mar, 2002

PD8932 Related Products

PD8932 PD8042 PD893D2 PD8XX2_02
Description InGaAs AVALANCHE PHOTO DIODES InGaAs AVALANCHE PHOTO DIODES InGaAs AVALANCHE PHOTO DIODES InGaAs AVALANCHE PHOTO DIODES

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