PG03EAESM datasheet, PDF - EEWORLD Datasheet

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PG03EAESM: Description60 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size322KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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PG03EAESM Overview

60 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE

PG03EAESM Parametric

Parameter Name	Attribute value
package instruction	R-PDSO-F3
Contacts	3
Manufacturer packaging code	ESM
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum breakdown voltage	5.88 V
Minimum breakdown voltage	5.32 V
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-F3
Maximum non-repetitive peak reverse power dissipation	60 W
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	3 V
surface mount	YES
technology	AVALANCHE
Terminal form	FLAT
Terminal location	DUAL
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

Protection in Portable Electronics Applications.

PG03EAESM

TVS Diode for ESD

Protection in Portable Electronics

FEATURES

Transient protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)

A

G

H

2

1

E

B

D

DIM

A

B

C

D

E

G

H

J

Small package for use in portable electronics.

Suitable replacement for Multi-Layer Varistors in ESD protection applications.

Protects one I/O or power line.

Low clamping voltage.

Low leakage current.

MILLIMETERS

_

1.60 + 0.10

_

0.85 + 0.10

_

0.70 + 0.10

0.27+0.10/-0.05

_

1.60 + 0.10

_

1.00 + 0.10

0.50

_

0.13 + 0.05

3

C

J

1. (TVS) D1 CATHODE

APPLICATIONS

Cell phone handsets and accessories.

Microprocessor based equipment.

Personal digital assistants (PDA s)

Notebooks, desktops, & servers.

Portable instrumentation.

Pagers peripherals.

2. (TVS) D2 CATHODE

3. COMMON ANODE

ESM

Marking

Type Name

E1

3

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Peak Pulse Power (tp=8/20 s)

Peak Pulse Current (tp=8/20 s)

Junction Temperature

Storage Temperature

)

SYMBOL

P

PK

I

PP

T

j

T

stg

RATING

60

5

150

-55 150

UNIT

W

A

D2

2

D1

1

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage

V

C(2)

Junction Capacitance

C

J

SYMBOL

V

RWM

V

BR

I

R

V

C(1)

I

t

=5mA

V

RWM

=3V

I

PP

=1A, tp=8/20 s

I

PP

=5A, tp=8/20 s

V

R

=0V, f=1MHz

TEST CONDITION

-

MIN.

-

5.32

-

TYP.

-

35

MAX.

3

5.88

5.0

10

15

45

UNIT

V

A

V

pF

2007. 5. 25

Revision No : 2

1/2

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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