PG05DXTET datasheet, PDF - EEWORLD Datasheet

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PG05DXTET: Description30 W, UNIDIRECTIONAL, 3 ELEMENT, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size322KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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PG05DXTET Overview

30 W, UNIDIRECTIONAL, 3 ELEMENT, SILICON, TVS DIODE

PG05DXTET Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	R-PDSO-F5
Contacts	5
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum breakdown voltage	7.14 V
Minimum breakdown voltage	6.47 V
Configuration	COMMON ANODE, 3 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-F5
Maximum non-repetitive peak reverse power dissipation	30 W
Number of components	3
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	5 V
surface mount	YES
technology	AVALANCHE
Terminal form	FLAT
Terminal location	DUAL

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SEMICONDUCTOR

TECHNICAL DATA

Protection in Portable Electronics Applications.

PG05DXTET

TVS Diode for ESD

Protection in Portable Electronics

FEATURES

30 Watts peak pulse power (tp=8/20 s)

Transient protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)

Small package for use in portable electronics.

Suitable replacement for Multi-Layer Varistors in ESD protection applications.

Protects one I/O or power line.

Low clamping voltage.

Low leakage current.

DIM

MILLIMETERS

1.6 + 0.05

1.0 + 0.05

1.6 + 0.05

1.2+ 0.05

0.50

0.2 + 0.05

0.5 + 0.05

0.12 + 0.05

APPLICATIONS

Cell phone handsets and accessories.

Microprocessor based equipment.

Personal digital assistants (PDA s)

Notebooks, desktops, & servers.

Portable instrumentation.

Pagers peripherals.

1. NC

2. COMMON ANODE

3. (TVS) D1 CATHODE

4. (TVS) D2 CATHODE

5. (TVS) D3 CATHODE

TESV

Marking

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Peak Pulse Power (tp=8/20 s)

Junction Temperature

Storage Temperature

)

SYMBOL

stg

RATING

150

-55 150

UNIT

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Junction Capacitance

SYMBOL

RWM

=1mA

RWM

=4.3V

=0V, f=1MHz

TEST CONDITION

MIN.

6.47

TYP.

MAX.

7.14

UNIT

2007. 9. 10

Revision No : 2

1/2

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