PG05DXTEV datasheet, PDF - EEWORLD Datasheet

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PG05DXTEV: Description30 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size324KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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PG05DXTEV Overview

30 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE

PG05DXTEV Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	R-PDSO-F5
Contacts	5
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum breakdown voltage	7.14 V
Minimum breakdown voltage	6.47 V
Configuration	COMMON ANODE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-F5
Maximum non-repetitive peak reverse power dissipation	30 W
Number of components	4
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	5 V
surface mount	YES
technology	AVALANCHE
Terminal form	FLAT
Terminal location	DUAL
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

Protection in Portable Electronics Applications.

PG05DXTEV

TVS Diode Array for ESD

Protection in Portable Electronics

FEATURES

30 Watts peak pulse power (tp=8/20 s)

Transient protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)

1

B

B1

DIM

A

5

C

A1

A

A1

B

B1

C

D

H

J

P

Small package for use in portable electronics.

Suitable replacement for Multi-Layer Varistors in ESD protection applications.

Protects one I/O or power line.

Low clamping voltage.

Low leakage current.

2

D

C

MILLIMETERS

_

1.6 + 0.05

_

1.0 + 0.05

_

1.6 + 0.05

_ 0.05

1.2+

0.50

_

0.2 + 0.05

_ 0.05

0.5 +

_

0.12 + 0.05

5

3

4

H

J

APPLICATIONS

Cell phone handsets and accessories.

Microprocessor based equipment.

Personal digital assistants (PDA s)

Notebooks, desktops, & servers.

Portable instrumentation.

Pagers peripherals.

1. (TVS) D1 CATHODE

2. COMMON ANODE

3. (TVS) D2 CATHODE

4. (TVS) D3 CATHODE

5. (TVS) D4 CATHODE

TESV

Marking

5

Type Name

4

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Peak Pulse Power (tp=8/20 s)

Junction Temperature

Storage Temperature

)

SYMBOL

P

PK

T

j

T

stg

RATING

30

150

-55 150

UNIT

W

1

TE

2

5

4

D4

D1

D3

D2

3

1

2

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage

Junction Capacitance

SYMBOL

V

RWM

V

BR

I

R

V

C

J

I

t

=1mA

V

RWM

=4.3V

I

PP

=1.6A, t

P

=8/20

V

R

=0V, f=1MHz

TEST CONDITION

-

MIN.

-

6.47

-

TYP.

-

12

MAX.

5

7.14

1

13

15

UNIT

V

A

V

pF

2007. 5. 11

Revision No : 2

3

1/2

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