MITSUBISHI <INTELLIGENT POWER MODULES>
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150CVA120
PM150CVA120
FLAT-BASE TYPE
FLAT-BASE TYPE
INSULATED PACKAGE
INSULATED PACKAGE
PM150CVA120
FEATURE
• 3φ 150A, 1200V Current-sense IGBT for 20kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
(P-F
O
available from upper leg devices)
• Acoustic noise-less 30kW class inverter application
• UL Recognized
Yellow Card No. E80276(N)
File No. E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
7.25
135
120.5
±0.25
28
P
N
42.25
4–R6
15
14.1
±0.2
14.1
±0.2
14.1
±0.2
26.25
14
1 23 4
5678
9101112
5–M5NUTS
13 14 15 16
17 18 19
U
V
W
4–φ5.5
MOUNTING HOLES
28
28
14.6
A
42.25
±0.3
2.54
±0.2
43.57
±0.3
110
97
95.5
±0.25
TERMINAL CODE
1. WF
O
8. V
VP1
15. V
NC
2. V
WPC
9. UF
O
16. V
N1
3. W
P
10. V
UPC
17. U
N
4. V
WP1
11. U
P
18. V
N
5. VF
O
12. V
UP1
19. W
N
6. V
VPC
13. NC
7. V
P
14. F
O
0.75
±0.3
10.65
3.49
±0.25
2.54
±0.25
2.54
±0.25
3.49
±0.25
4-φ3
C0.7
0.64
2.54
±0.25
29
–0.5
28
26.5
LABEL
4
29
38.4
39.4
+1.0
A : DETAIL
Jun. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150CVA120
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
F
O
Rfo
Rfo
Rfo
Rfo
NC VNC WN
VN1
VN
UN
W
P
V
WP1
V
P
V
VP1
U
P
V
UP1
V
WPC
W
FO
V
VPC
V
FO
V
UPC
U
FO
GND F
O
In
V
CC
TEMP
GND Si OUT
Th
GND F
O
In
V
CC
GND
In
F
O
V
CC
GND F
O
In
V
CC
GND F
O
In
V
CC
GND F
O
In
V
CC
GND Si OUT
GND Si OUT
GND Si OUT
GND Si OUT
GND Si OUT
Rfo=1.5kΩ
N
W
V
U
P
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CES
±I
C
±I
CP
P
C
T
j
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
Condition
V
D
= 15V, V
CIN
= 15V
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Ratings
1200
150
300
710
–20 ~ +150
Unit
V
A
A
W
°C
CONTROL PART
Symbol
V
D
V
CIN
V
FO
I
FO
Parameter
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Condition
Applied between : V
UP1
-V
UPC
V
VP1
-V
VPC
, V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC,
W
P
-V
WPC
U
N
• V
N
• W
N
-V
NC
Applied between : U
FO
-V
UPC,
V
FO-
V
VPC,
W
FO
-V
WPC
F
O
-V
NC
Sink current at U
FO
, V
FO
, W
FO
and F
O
terminal
Ratings
20
20
20
20
Unit
V
V
V
mA
Jun. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150CVA120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Parameter
Supply Voltage Protected by
V
CC(PROT)
SC
Symbol
V
CC(surge)
Supply Voltage (Surge)
T
C
T
stg
V
iso
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= 125°C Start
Applied between : P-N, Surge value or without
switching
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Ratings
800
1000
–20 ~ +100
–40 ~ +125
2500
Unit
V
V
°C
°C
V
rms
(Note-1) T
C
measurement point is below. (3mm depth at the center of the side of base plate)
Tc
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CE(sat)
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
I
CES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Test Condition
V
D
= 15V, I
C
= 150A
V
CIN
= 0V
–I
C
= 150A, V
D
= 15V, V
CIN
= 15V
V
D
= 15V, V
CIN
= 0V↔15V
V
CC
= 600V, I
C
= 150A
T
j
= 125°C
Inductive Load (upper and lower arm)
V
CE
= V
CES
, V
CIN
= 15V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min.
—
—
—
0.4
—
—
—
—
—
—
Limits
Typ.
2.65
2.75
2.50
0.9
0.2
0.4
2.4
0.7
—
—
Max.
3.30
3.35
3.50
2.3
0.3
1.0
3.4
1.2
1
10
Unit
V
V
Switching Time
µs
Collector-Emitter
Cutoff Current
mA
CONTROL PART
Symbol
I
D
V
th(ON)
V
th(OFF)
SC
t
off(SC)
OT
OT
r
UV
UV
r
I
FO(H)
I
FO(L)
t
FO
Parameter
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Over Temperature Protection
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
Test Condition
V
D
= 15V, V
CIN
= 15V
V
N1
-V
NC
V
*P1
-V
*PC
Min.
—
—
1.2
1.7
200
—
Trip level
Reset level
Trip level
Reset level
(Note-2)
(Note-2)
111
—
11.5
—
—
—
1.0
Limits
Typ.
72
24
1.5
2.0
—
10
118
100
12.0
12.5
—
10
1.8
Max.
100
34
1.8
2.3
—
—
125
—
12.5
—
0.01
15
—
Unit
mA
V
A
µs
°C
V
mA
ms
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
• V
N
• W
N
-V
NC
–20≤ T
j
≤
125°C, V
D
= 15V
V
D
= 15V
Base-plate
Temperature detection, VD = 15V
–20
≤
T
j
≤
125°C
V
D
= 15V, V
FO
= 15V
V
D
= 15V
(Note-2) Fault output is given only when the internal SC, OT & UV protection.
Fault output of OT protection operate by lower arm
Fault output of OT, UV protection given pulse while over level.
Jun. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150CVA120
FLAT-BASE TYPE
INSULATED PACKAGE
THERMAL RESISTANCES
Symbol
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Parameter
Junction to case Thermal
Resistances
Contact Thermal Resistance
Test Condition
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Case to fin, Thermal grease applied (per 1 module)
Min.
—
—
—
Limits
Typ.
—
—
—
Max.
0.176
0.26
0.018
Unit
°C/W
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol
—
—
—
Parameter
Mounting torque
Mounting torque
Weight
Mounting part
Main terminal
Test Condition
screw : M5
screw : M5
Min.
2.5
2.5
—
Limits
Typ.
3.0
3.0
1000
Max.
3.5
3.5
—
Unit
N•m
N•m
g
RECOMMENDED CONDITIONS FOR USE
Symbol
V
CC
V
D
V
CIN(ON)
V
CIN(OFF)
t
dead
f
PWM
Parameter
Supply Voltage
Control Supply Voltage
Input ON Voltage
Input OFF Voltage
Arm Shoot-through
Blocking Time
PWM Input Frequency
Test Condition
Applied across P-N terminals
Applied between : V
UP1
-V
UPC
, V
VP1
-V
VPC
V
WP1
-V
WPC
, V
N1
-V
NC
(Note-3)
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
• V
N
• W
N
-V
NC
For IPM’s each input signals
Using Application Circuit input signal of IPM, 3φ
Sinusoidal PWM VVVF inverter
Recommended value
≤
800
15
±
1.5
≤
0.8
≥
4.0
≥
3.0
≤
20
Unit
V
V
V
µs
kHz
(Note-3) With ripple satisfying the following conditions dv/dt swing
≤ ±5V/µs,
Variation
≤
2V peak to peak
Jun. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150CVA120
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
T
j
= 25°C
V
D
= 17V
15V
13V
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
160
140
120
100
80
60
40
20
0
0
4
V
D
= 15V
T
j
= 25°C
T
j
= 125°C
3
2
1
1
2
3
4
0
0
20
40
60
80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
10
1
T
j
= 125°C
V
CC
= 600V
V
D
= 15V
3
Inductive load
7
5
2
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
5
SWITCHING TIME (µs)
4
I
C
= 150A
T
j
= 25°C
T
j
= 125°C
3
t
off
t
on
t
c(off)
10
0
7
5
3
2
2
1
t
c(on)
0
10
12
14
16
18
20
10
–1 1
10
2
3
5 7
10
2
2
3
5 7
10
3
CONTROL SUPPLY VOLTAGE V
D
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR RECOVERY CURRENT –I
C
(A)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT l
rr
(A)
7
5
3
2
V
D
= 15V
T
j
= 25°C
T
j
= 125°C
7
5
3
2
V
CC
= 600V
V
D
= 15V
Inductive load
T
j
= 25°C
T
j
= 125°C
I
rr
7
5
3
2
10
2
7
5
3
2
10
2
7
5
3
2
t
rr
10
–1
7
5
3
2
10
1
0.4
0.8
1.2
1.6
2.0
2.4
10
1 1
10
2
3
5 7
10
2
2
3
5 7
10
3
10
–2
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
COLLECTOR RECOVERY CURRENT –I
C
(A)
Jun. 2005
REVERS RECOVERY TIME t
rr
(µs)
10
3
10
3
10
0
京公网安备 11010802033920号
EEWORLD
