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SBE808

Description
1 A, 15 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size32KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SBE808 Overview

1 A, 15 V, 2 ELEMENT, SILICON, SIGNAL DIODE

SBE808 Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PDSO-F5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.48 V
JESD-30 codeR-PDSO-F5
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
Maximum reverse current3 µA
Maximum reverse recovery time0.01 µs
Reverse test voltage6 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Ordering number : ENA0451
SBE808
SANYO Semiconductors
DATA SHEET
SBE808
Applications
Schottky Barrier Diode
15V, 1A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
Small switching noise.
Low leakage current and high reliability due to planar structure.
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings
at Ta=25°C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
15
17
1
10
--55 to +150
--55 to +150
Unit
V
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
IR=0.1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm
!0.8mm)
2
Conditions
Ratings
min
15
0.43
0.49
20
10
185
0.48
0.54
3.0
typ
max
Unit
V
V
V
µA
pF
ns
°C
/ W
Marking : SE
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0106SB SY IM TC-00000264 No. A0451-1/3
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