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31DF6

Description
1.2 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size180KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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31DF6 Overview

1.2 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD

31DF6 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionGREEN, PLASTIC PACKAGE-2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current45 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1.2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
31DF4 - 31DF6
3.0 AMPS. Super Fast Rectifiers
DO-201AD
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss.
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, Lead free., solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260
o
C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.2 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
o
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
.375 (9.5mm) Lead Length @T
A
= 29 C
(Note 1)
@T
L
= 109
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 3.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Maximum Reverse Recovery Time (Note 3)
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
θJA
T
J
T
STG
31DF4
400
280
400
1.2
3.0
31DF6
600
420
600
Units
V
V
V
A
A
V
uA
o
45
1.7
20
100
35
80
-40 to +150
-40 to +150
nS
C/W
o
C
o
C
Storage Temperature Range
Notes:
1. Without Fin or P.C.Board..
2. Thermal Resistance from Junction to Ambient .375” (9.5mm) Lead Length.
3. Reverse recovery Test Condition: Ta = 25℃, IFM=3A, di/dt = 50A / Us.
Version: A06

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