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BA157_1

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size181KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BA157_1 Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

BA157 - BA159
1.0 AMP. Fast Recovery Rectifiers
DO-41
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss.
Mechanical Data
Cases: DO-41 Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, Lead free.,
solderable per MIL-STD-202, Method
208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260
o
C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Weight: 0.34 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
.375”(9.5mm) Lead Length @T
A
= 45 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance
Operating Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
BA157
400
280
400
BA158
600
420
600
1.0
30
1.2
5.0
150
150
10
65
-65 to +150
-65 to +150
BA159
1000
700
1000
Units
V
V
V
A
A
V
uA
uA
nS
pF
o
250
Storage Temperature Range
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
C/W
o
C
o
C
Version: A06

BA157_1 Related Products

BA157_1 BA159
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

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