Pb
RoHS
COMPLIANCE
BC856A,B
BC857A,B,C
BC858A,B,C
0.2 Watts PNP Plastic-Encapsulate Transistors
SOT-23
Features
Ideally suited for automatic insertion
Epitaxial planar die construction
For switching, AF driver and amplifier
applications
Complementary PNP type available(BC846)
Qualified to AEC-Q101 standards for high
reliability
Mechanical Data
Case: SOT-23, Molded plastic
Case material: molded plastic. UL flammability
classification rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIIL-STD-202,
Method 208
Lead free plating
Marking & Polarity: See diagram
Weight: 0.008 gram (approx.
)
Dimensions in inches and (millimeters)
Maximum Ratings
Type Number
T
A
=25
o
C unless otherwise specified
Symbol BC856
V
CBO
V
CEO
I
CM
P
CM
V
EBO
I
CBO
BC857
-50
-45
-0.1
0.2
-5
-0.1
BC858
-30
-30
Units
V
V
A
W
V
uA
Collector-base breakdown voltage
I
C
=10uA, I
E
=0
Collector-emitter breakdown voltage I
C
=10mA, I
B
=0
Collector current
o
Power dissipation (Tamb=25 C) (Note 1)
I
E
=10uA, I
C
=0
V
CB
=-70V I
E
=0
V
CB
=-45V I
E
=0
V
CB
=-25V I
E
=0
Collector cut-off current
V
CE
=-60V I
B
=0
V
CE
=-40V I
B
=0
V
CE
=-25V I
B
=0
Emitter cut-off current
V
EB
=-5V I
C
=0
Collector-emitter saturation voltage I
C
=-100mA, I
B
=-5mA
Base-emitter saturation voltage I
C
=-100mA, I
B
=-5mA
Transition frequency V
CE
=-5V I
C
=-10mA f=100MHz
Operating and Storage Temperature Range
Emitter-base breakdown voltage
Collector cut-off current
-80
-65
-0.1
-0.1
-0.1
I
CEO
I
EBO
V
CE
(sat)
V
BE
(sat)
f
T
-0.1
-0.1
-0.1
-0.5
-1.1
100
-55 to + 150
uA
uA
V
V
MHz
o
C
Type Number
DC current gain BC846A,847A,848A
BC846B,847B,848B V
CE
=-5V I
C
=-2mA
BC847C / BC848C
T
J
, T
STG
Symbol
H
FE(1)
Min
125
220
420
Max
250
475
800
Units
DEVICE MARKING
BC856A=3A, BC856B=3B, BC857A=3E, BC857B=3F, BC857C=3G,BC858A=3J, BC858B=3K, BC858C=3L
Note 1: Transistor mounted on an FR4 Printed-circuit board.
Version: B07
RATINGS AND CHARACTERISTIC CURVES (BC856A,B/ BC857A,B,C/ BC858A,B,C)
FIG.1- DC CURRENT GAIN AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
V
CE
= -5V
-1000
500
-1200
FIG.2- BASE-EMITTER VOLTAGE AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
V
CE
= -5V
O
-55 C
T
amb
=
400
T
a
300
mb
=
150
O
C
-800
200
T
am
= 2
O
5 C
b
V
BE
(mV)
h
FE
25
T
amb
=
O
C
-600
O
0 C
= 15
T
amb
T
amb
= -55
O
C
100
-400
-200
0
-0.01
-0.1
-1
I
C
(mA)
-10
-100
-1000
-0.01
0
-1000
-0.1
-1
I
C
(mA)
-10
-100
-10000
FIG.3- COLLECTOR-EMITTER SATURATION VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
I
C
/ I
B
=20
-1200
FIG.4- BASE-EMITTER SATURATION VOLTAGE AS A
FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
I
C
/ I
B
=20
-1000
T
amb
=
-1000
-800
O
-55 C
V
CEsat
(mV)
V
BEsat
(mV)
T
amb
T
am
-100
O
C
= 25
b
= 150 C
O
O
25 C
T
amb
=
O
0 C
= 15
T
amb
-600
-400
O
5 C
= -5
T
amb
-200
-10
-0.1
-1
-10
I
C
(mA)
-100
-1000
0
-0.1
-1
-10
I
C
(mA)
-100
-1000
1000
FIG.5- DC CURRENT GAIN AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
V
CE
= -5V
-1200
FIG.6- BASE-EMITTER VOLTAGE AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
V
CE
= -5V
800
-1000
O
-55 C
T
amb
=
-800
600
V
BE
(mV)
T
a
h
FE
mb
=
150
O
C
T
amb
=
O
25 C
-600
400
T
amb
= 25
O
C
T
amb
= -55
O
C
O
0 C
= 15
T
amb
-400
200
-200
0
-0.01
-0.1
-1
I
C
(mA)
-10
-100
-1000
0
-0.01
-0.1
-1
I
C
(mA)
-10
-100
-1000
Version:
B07
RATINGS AND CHARACTERISTIC CURVES (BC856
A,B/
BC857A,B,C/ BC858A,B,C)
FIG.7- COLLECTOR-EMITTER SATURATION VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
FIG.8- BASE-EMITTER SATURATION VOLTAGE AS A
FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
I
C
/ I
B
=20
I
C
/ I
B
=20
-1000
O
-55 C
T
amb
=
-10000
-1200
-1000
-800
V
CEsat
(mV)
V
BEsat
(mV)
T
am
25
T
amb
=
-100
O
150 C
b
=
O
T
amb
=
O
25 C
-600
C
T
am
-400
O
0 C
= 15
b
O
5 C
= -5
T
amb
-200
-10
-0.1
-1
-10
I
C
(mA)
-100
-1000
0
-0.1
-1
-10
I
C
(mA)
-100
-1000
1000
FIG.9- DC CURRENT GAIN AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
T
a
mb
=
-1200
FIG.10- BASE-EMITTER VOLTAGE AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
800
150
O
C
V
CE
= -5V
-1000
V
CE
= -5V
O
-55 C
T
amb
=
-800
600
V
BE
(mV)
h
FE
T
am
= 2
O
5 C
b
O
25 C
T
amb
=
-600
400
T
amb
= -55
O
C
200
-400
T
amb
O
0 C
= 15
-200
0
-0.01
-0.1
-1
I
C
(mA)
-10
-100
-1000
0
-0.01
-0.1
-1
I
C
(mA)
-10
-100
-1000
-10000
FIG.11- COLLECTOR-EMITTER SATURATION VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
I
C
/ I
B
=20
-1200
FIG.12- BASE-EMITTER SATURATION VOLTAGE AS A
FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
I
C
/ I
B
=20
-1000
T
amb
=
-1000
-800
O
T
amb
= 150 C
O
-55 C
V
CEsat
(mV)
V
BEsat
(mV)
T
amb
=
O
25 C
-600
-100
T
amb
O
C
= 25
T
amb
-400
O
5 C
= -5
O
0 C
= 15
T
amb
-200
-10
-0.1
-1
-10
I
C
(mA)
-100
-1000
0
-0.1
-1
-10
I
C
(mA)
-100
-1000
Version:
B07
Embedded System
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