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BY297

Description
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size54KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BY297 Overview

2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15

BY297 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current70 A
Number of components1
Maximum operating temperature150 °C
Maximum output current2 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.5 µs
surface mountNO
BY296
THRU
BY299
2.0 AMPS. Fast Recovery Rectifiers
Voltage Range
100 to 800 Volts
Current
2.0 Amperes
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
DO-201AD
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-
STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260℃/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Weight: 1.2 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
BY296
Type Number
Maximum Recurrent Peak Reverse Voltage
V
RRM
100
Maximum RMS Voltage
V
RMS
70
Maximum DC Blocking Voltage
V
DC
100
Maximum Average Forward Rectified Current
.375”(9.5mm) Lead Length @T
A
= 55℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=100℃
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance ( Note 3 )
Operating Temperature Range
Storage Temperature Range
BY297
200
140
200
BY298
400
280
400
BY299
Units
800
V
560
V
800
V
A
A
V
uA
uA
nS
pF
O
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θ
JA
T
J
2.0
70
1.2
5.0
100
250
40
55
-65 to +150
-65 to +150
C/W
T
STG
Notes:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
- 408 -

BY297 Related Products

BY297 BY296 BY298 BY299
Description 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code unknow unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak forward current 70 A 70 A 70 A 70 A
Number of components 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 2 A 2 A 2 A 2 A
Maximum repetitive peak reverse voltage 200 V 100 V 400 V 800 V
Maximum reverse recovery time 0.5 µs 0.5 µs 0.5 µs 0.5 µs
surface mount NO NO NO NO
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