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SVC272

Description
47.365 pF, 14 V, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size20KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SVC272 Overview

47.365 pF, 14 V, SILICON, VARIABLE CAPACITANCE DIODE

SVC272 Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage14 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance5.18%
Minimum diode capacitance ratio2.3
Nominal diode capacitance47.365 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
minimum quality factor150
Maximum repetitive peak reverse voltage16 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Ordering number : ENN7680
SVC272
Silicon Diffused Junction Type Varactor Diode
SVC272
FM Receiver Electronic Tuning Applications
Features
Package Dimensions
unit : mm
1326
[SVC272]
0.25
Twin type varactor diode with good large-signal
characteristics for FM receiver electronic tuning
use.
Small package permits SVC272-applied sets to
be compact and slim.
Can be also provieded in tape reel package thereby
automatic insertion is supported.
High Quality Factor.
0.3
3
0.15
2.1
1.6
Electrical Connection
3
1 : Anode
2 : Anode
3 : Cathode
Top view
1
2
0.25
0.65
2.0
(Bottom view)
0.07
2
1
3
1 : Anode
2 : Anode
3 : Cathode
1
2
SANYO : MCPH3
(Top view)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Conditions
Ratings
16
125
--55 to +125
Unit
V
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Breakdown Voltage
Reverse Current
Interterminal Capacitance
*
Quality Factor
Capacitance Ratio
Matching Tolerance
Symbol
V(BR)R
IR
C2.0V
C8.0V
Q
CR
∆Cm
IR=10µA
VR=10V
VR=2.0V, f=1MHz
VR=8.0V, f=1MHz
VR=2.0V, f=100MHz
C2.0V / C8.0V
VR=2.0V, 8.0, f=1MHz (C max-C min) / C min!100
Conditions
Ratings
min
14
50
44.91
14.07
150
2.3
3.0
%
49.82
18.55
typ
max
Unit
V
nA
pF
pF
Note)* : Capacitance value per each diode.
Marking : V2
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71504 VB TS IM TA-100827 No.7680-1/3
0.85

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