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HER0801G

Description
8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size233KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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HER0801G Overview

8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

HER0801G – HER0808G
8.0 AMPS. Glass Passivated High Efficient Rectifiers
TO-220AB
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Case: TO-220AB molded plastic
Epoxy: UL 94V0 rate flame retardant
Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
o
260 C/10 seconds .16”,(4.06mm) from case
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
@T
C
= 100 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 4.0A
Maximum DC Reverse Current
o
@
A
=25 C at Rated DC Blocking Voltage
o
@ T
A
=125 C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance
Operating Temperature Range
( Note 2 )
Typical Thermal Resistance ( Note 3 )
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
HER HER HER HER HER HER HER HER
0801G 0802G 0803G 0804G 0805G 0806G 0807G 0808G
Units
V
V
V
A
A
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
700
1000
8.0
125
1.0
1.3
1.7
V
uA
uA
nS
pF
o
C/W
o
C
o
C
10
400
50
80
3.0
-65 to +150
80
50
Trr
Cj
R
θJC
T
J
Storage Temperature Range
T
STG
-65 to +150
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate..
Version: A06

HER0801G Related Products

HER0801G HER0801G_1 HER0803G HER0802G HER0808G HER0806G HER0807G HER0804G HER0805G
Description 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
Is it Rohs certified? - - conform to - conform to conform to conform to - conform to
Maker - - Taiwan Semiconductor - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
Reach Compliance Code - - compli - compli compli compli - compli
Diode type - - RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) - - 1 V - 1.7 V 1.7 V 1.7 V - 1.3 V
Humidity sensitivity level - - 1 - 1 1 1 - 1
Maximum non-repetitive peak forward current - - 125 A - 125 A 125 A 125 A - 125 A
Maximum operating temperature - - 150 °C - 150 °C 150 °C 150 °C - 150 °C
Maximum output current - - 8 A - 8 A 8 A 8 A - 8 A
Maximum repetitive peak reverse voltage - - 200 V - 1000 V 600 V 800 V - 400 V
Maximum reverse recovery time - - 0.05 µs - 0.08 µs 0.08 µs 0.08 µs - 0.05 µs
surface mount - - NO - NO NO NO - NO

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