Transistors
2SB1678
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency amplification
I
Features
•
Low collector to emitter saturation voltage V
CE(sat)
•
Large Peak collector current I
CP
•
Mini power type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
4.5
±0.1
1.6
±0.2
1.5
±0.1
4.0
+0.25
–0.20
2.5
±0.1
3˚
0.4
±0.04
0.4
±0.08
1.5
±0.1
3˚
1.0
+0.1
–0.2
3
1
2
0.5
±0.08
2.6
±0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
45˚
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
−30
−20
−7
−5
−3
1
150
−55
to
+150
Unit
3.0
±0.15
V
V
V
A
A
W
°C
°C
1: Emitter
2: Collector
3: Base
MiniP3 Type Package
Marking Symbol: 2K
Note) *: Printed circuit board copper foil for collector portion
area: 1.0 Cm
2
or more, thickness: 1.7 mm
Absolute maximum rating P
C
Without heat sink shall be 0.5 W
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
*1, 2
Collector to emitter saturation voltage
*1
Collector output capacitance
Transition frequency
Note) *1: Pulse measurement
*2: Rank classification
Rank
h
FE
P
90 to 135
Q
120 to 205
R
180 to 625
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE
V
CE(sat)
C
ob
f
T
Conditions
V
CB
= −10
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CE
= −2
V, I
C
=
200 mA
I
C
= −3
A, I
B
= −
0.1 A
V
CB
= −20
V, I
E
=
0, f
=
1 MHz
V
CB
=
−6
V, I
E
= 50 mA, f = 200 MHz
120
−20
−7
90
625
−1
85
V
pF
MHz
Min
Typ
Max
−100
−100
Unit
nA
nA
V
V
0.4 max.
1
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•
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