STT500
Thyristor-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
STT500GK08
STT500GK12
STT500GK14
STT500GK16
STT500GK18
Symbol
I
TRMS
, I
FRMS
T
VJ
=T
VJM
I
TAVM
, I
FAVM
T
C
=85
o
C; 180
o
sine
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=T
VJM
f=50Hz, t
p
=200us
V
D
=2/3V
DRM
I
G
=1A
di
G
/dt=1A/us
Test Conditions
Maximum Ratings
785
500
Unit
A
I
TSM
, I
FSM
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, I
T
=960A
15000
16000
13000
14400
1125000
1062000
845000
813000
100
A
i
2
dt
A
2
s
(di/dt)
cr
A/us
non repetitive, I
T
=I
TAVM
500
1000
120
60
20
10
-40...+140
140
-40...+125
V/us
W
W
V
o
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
=T
VJM
;
V
DR
=2/3V
DRM
R
GK
= ; method 1 (linear voltage rise)
T
VJ
=T
VJM
I
T
=I
TAVM
t
p
=30us
t
p
=500us
C
50/60Hz, RMS
_
I
ISOL
<1mA
t=1min
t=1s
3000
3600
4.5-7/40-60
11-13/97-115
940
V~
Nm/lb.in.
g
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
STT500
Thyristor-Thyristor Modules
Symbol
I
RRM
V
T
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJK
d
S
d
A
a
V
D
=6V;
V
D
=6V;
T
VJ
=T
VJM
;
T
VJ
=T
VJM
;
T
VJ
=25
o
C
T
VJ
=-40
o
C
T
VJ
=25
o
C
T
VJ
=-40
o
C
V
D
=2/3V
DRM
V
D
=2/3V
DRM
T
VJ
=T
VJM
; V
R
=V
RRM
I
T
=1200A; T
VJ
=25
o
C
For power-loss calculations only (T
VJ
=T
VJM
)
Test Conditions
Characteristic Values
40
1.3
0.8
0.38
2
3
300
400
0.25
10
400
300
2
typ.
350
0.072
0.096
12.7
9.6
50
Unit
mA
V
V
m
V
mA
V
mA
mA
mA
us
us
K/W
K/W
mm
mm
m/s
2
T
VJ
=25
o
C; t
p
=30us; V
D
=6V
I
G
=1A; di
G
/dt=1A/us
T
VJ
=25
o
C; V
D
=6V; R
GK
=
T
VJ
=25
o
C; V
D
=1/2V
DRM
I
G
=1A; di
G
/dt=1A/us
T
VJ
=T
VJM
; I
T
=500A; t
p
=200us; -di/dt=10A/us
V
R
=100V; dv/dt=50V/us; V
D
=2/3V
DRM
DC current
DC current
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
FEATURES
* International standard package
* Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control, softstarter
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Solid state switches
ADVANTAGES
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
STT500
Thyristor-Thyristor Modules
14000
10
7
1000
V
R
= 0V
I
TSM
12000
A
10000
8000
It
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 140°C
A
2
s
2
I
TAVM
A
900
800
700
600
DC
180° sin
120°
60°
30°
10
6
6000
T
VJ
= 45°C
500
400
T
VJ
= 140°C
4000
2000
300
200
100
0
0.001
10
5
0.01
0.1
0
1
1
t
ms
0
0
25
50
75
100
T
C
s
t
1
125 °C 150
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
1200
P
tot
W
Fig. 2 i
2
dt versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
10
1: I
GT
, T
VJ
= 140°C
R
thKA
K/W
V
V
G
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
3
2
1
5
4
6
1000
800
0.03
0.07
0.12
0.2
0.3
0.4
0.6
DC
180° sin
120°
60°
30°
600
1
400
200
I
GD
, T
VJ
= 140°C
0
0
200
400
600
800 A
0
25
50
75
100
I
TAVM
/ I
FAVM
125
°C
T
A
150
0.1
10
-3
10
-2
10
-1
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
10
0
I
G
10
1
A
10
2
Fig. 4 Power dissipation versus on-state current and ambient temperature
5000
W
4500
4000
P
tot
3500
3000
2500
2000
1500
1000
500
0
0
300
600
900
1200 1500 A 0
I
dAVM
25
50
75
100
°C
125
T
A
150
Circuit
B6
3 x STT500
3xMTC500
Fig. 5 Gate trigger characteristics
100
T
VJ
= 25° C
R
thKA
K/W
s
t
gd
typ.
Limit
0.01
0.02
0.03
0.045
0.06
0.08
0.12
10
1
0.01
0.1
1
I
G
A
10
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 7 Gate trigger delay time
STT500
Thyristor-Thyristor Modules
5000
W
4500
P
tot
4000
3500
3000
2500
2000
1500
1000
500
0
0
300
600
900
1200 A
I
RMS
0
25
50
75
100
125 °C 150
T
A
Circuit
W3
3xMTC500
3 x STT500
R
thKA
K/W
0.01
0.02
0.03
0.045
0.06
0.08
0.12
Fig. 8 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
0.12
K/W
0.10
Fig. 9 Transient thermal impedance
junction to case (per thyristor)
R
thJC
for various conduction angles d:
Z
thJC
0.08
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJC
(K/W)
0.072
0.0768
0.081
0.092
0.111
0.06
30°
60°
120°
180°
DC
0.04
0.02
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
0.0035
0.0186
0.0432
0.0067
t
i
(s)
0.0054
0.098
0.54
12
1
2
3
4
0.00
10
-3
10
-2
10
-1
10
0
10
1
t
s
10
2
0.14
K/W
0.12
Z
thJK
Fig.10 Transient thermal impedance
junction to heatsink (per thyristor)
R
thJK
for various conduction angles d:
0.10
0.08
0.06
0.04
0.02
0.00
10
-3
30°
60°
120°
180°
DC
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJK
(K/W)
0.096
0.1
0.105
0.116
0.135
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
0.0035
0.0186
0.0432
0.0067
0.024
t
i
(s)
0.0054
0.098
0.54
12
12
1
2
3
4
5
10
-2
10
-1
10
0
10
1
t
s
10
2
Embedded System
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