3N158A datasheet, PDF - EEWORLD Datasheet

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3N158A: Description30mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72; CategoryThe transistor; File Size132KB，4 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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3N158A Overview

30mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72

3N158A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	SUBSTRATE
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	0.03 A
Maximum drain current (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1.3 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

3N158A Related Products

	3N158A	3N155	3N155A	3N156A	3N157A
Description	30mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72	30mA, 35V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72	30mA, 35V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72	30mA, 35V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72	30mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	50 V	35 V	35 V	35 V	50 V
Maximum drain current (Abs) (ID)	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
Maximum drain current (ID)	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1.3 pF	1.3 pF	1.3 pF	1.3 pF	1.3 pF
JEDEC-95 code	TO-72	TO-72	TO-72	TO-72	TO-72
JESD-30 code	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4
Number of components	1	1	1	1	1
Number of terminals	4	4	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	CHOPPER	CHOPPER	CHOPPER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1
Maximum drain-source on-resistance	-	600 Ω	300 Ω	300 Ω	-

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