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FRAF801G_1

Description
8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size200KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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FRAF801G_1 Overview

8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC

FRAF801G - FRAF807G
Isolated 8.0 AMPS. Glass Passivated
Fast Recovery Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.112(2.85)
.100(2.55)
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
.606(15.5)
.583(14.8)
.063(1.6)
MAX
.161(4.1)
.146(3.7)
.110(2.8)
.098(2.5)
.030(0.76)
.020(0.50)
.055(1.4)
.043(1.1)
.035(0.9)
.020(0.5)
.071(1.8)
MAX
.543(13.8)
.512(13.2)
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
o
260 C /10 seconds 0.25”,(6.35mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
2
.100(2.55)
.100(2.55)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 55
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage @ 8.0A
Maximum DC Reverse Current @ T
C
=25 C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Maximum Reverse Recovery Time ( Note 2 )
Typical Junction Capacitance ( Note 1 ) T
J=
25 C
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
o
o
Symbol
FRAF FRAF FRAF FRAF FRAF FRAF FRAF
Units
801G
802G
803G
804G
805G
806G
807G
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
50
35
50
100
70
100
200
140
200
400
280
400
8.0
150
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
150
250
50
5.0
-65 to +150
500
Cj
R
θJC
Notes:
T
J
,
T
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
Version: A06

FRAF801G_1 Related Products

FRAF801G_1 FRAF802G FRAF801G FRAF803G FRAF806G FRAF804G FRAF807G FRAF805G
Description 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Is it Rohs certified? - conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code - compli compli compli compli compli compli compliant
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
Humidity sensitivity level - 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current - 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Number of components - 1 1 1 1 1 1 1
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current - 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Maximum repetitive peak reverse voltage - 100 V 50 V 200 V 800 V 400 V 1000 V 600 V
Maximum reverse recovery time - 0.15 µs 0.15 µs 0.15 µs 0.5 µs 0.15 µs 0.5 µs 0.25 µs
surface mount - NO NO NO NO NO NO NO
Base Number Matches - 1 1 1 1 - 1 1

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