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3SK202

Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
CategoryThe transistor   
File Size65KB,1 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

3SK202 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

3SK202 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)25 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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