3N170, 3N171
N-CHANNEL MOSFET
ENHANCEMENT MODE
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
Drain to Source
Maximum Voltages
Drain to Gate
Drain to Source
Gate to Source
±35V
25V
±35V
30mA
300mW
-65 to +150 °C
-55 to +135 °C
1
r
ds(on)
≤ 200Ω
t
d(on)
≤ 3.0ns
3N170, 171
SOT-143
TOP VIEW
3N170, 171
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
BV
DSS
V
DS(on)
V
GS(th)
I
GSS
I
DSS
I
D(on)
g
fs
r
ds(on)
C
rss
C
iss
C
db
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
Gate to Source
Threshold Voltage
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
Drain to Body Capacitance
10
1000
200
1.3
5.0
5.0
pF
3N170
3N171
1.0
1.5
MIN
25
2.0
2.0
3.0
10
10
pA
nA
mA
µS
Ω
V
TYP
MAX
UNITS
CONDITIONS
I
D
= 10µA, V
GS
= 0V
I
D
= 10mA, V
GS
= 10V
V
DS
= 10V, I
D
= 10µA
V
GS
= -35V, V
DS
= 0V
V
DS
= 10V, V
GS
= 0V
V
GS
= 10V, V
DS
= 10V
V
DS
= 10V, I
D
= 2.0mA,
f
= 1.0kHz
V
GS
= 10V, I
D
= 100µA,
f
= 1.0kHz
V
DS
= 0V, V
GS
= 0V,
f
= 1.0MHz
V
DS
= 10V, V
GS
= 0V,
f
= 1.0MHz
V
DB
= 10V,
f
= 1.0MHz
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201139 07/12/13
Rev#A15 ECN# 3N170_3N171
SWITCHING CHARACTERISTICS
SYMBOL
t
d(on)
t
r
t
d(off)
t
f
CHARACTERISTIC
Turn On Delay Time
Turn On Rise Time
Turn Off Delay Time
Turn Off Fall Time
MIN
TYP
MAX
3.0
10
3.0
15
ns
V
DD
= 10V, ID
D(on)
= 10mA,
V
GS(on)
= 10V, V
GS(off)
= 0V
R
G
= 50Ω
UNITS
CONDITIONS
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201139 07/12/13
Rev#A15 ECN# 3N170_3N171
Talking
京公网安备 11010802033920号
EEWORLD
