3N170
N-CHANNEL MOSFET
The 3N170 is an enhancement mode N-Channel Mosfet
The 3N170 is an enhancement mode N-Channel Mosfet
designed for use as a General Purpose amplifier or
switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N170
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
r
DS(on)
≤ 200Ω
t
d(on)
≤ 3.0ns
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
3N170 Features:
Maximum Power Dissipation
Continuous Power Dissipation
Low ON Resistance
MAXIMUM CURRENT
Low Capacitance
Drain to Source (Note 1)
High Gain
MAXIMUM VOLTAGES
High Gate Breakdown Voltage
Drain to Gate
Low Threshold Voltage
Drain to Source
Peak Gate to Source (Note 2)
3N170 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
BV
DSS
Drain to Source Breakdown Voltage
25
‐‐
‐‐
V
V
DS(on)
Drain to Source “On” Voltage
‐‐
‐‐
2.0
V
GS(th)
Gate to Source Threshold Voltage
1.0
‐‐
2.0
I
GSS
Gate Leakage Current
‐‐
‐‐
10
pA
I
DSS
Drain Leakage Current “Off”
‐‐
‐‐
10
nA
I
D(on)
Drain Current “On”
10
‐‐
‐‐
mA
g
fs
Forward Transconductance
1000
‐‐
‐‐
µS
r
DS(on)
Drain to Source “On” Resistance
‐‐
‐‐
200
Ω
‐65°C to +150°C
‐55°C to +135°C
300mW
30mA
±35V
25V
±35V
CONDITIONS
I
D
= 10µA, V
GS
= 0V
I
D
= 10mA, V
GS
= 10V
V
DS
= 10V, I
D
= 10µA
V
GS
= ‐35V, V
DS
= 0V
V
GS
= 10V, V
DS
= 10V
V
GS
= 10V, V
DS
= 10V
V
DS
= 10V, I
D
= 2mA , f = 1kHz
V
GS
= 10V, I
D
= 0A, f = 1kHz
C
rss
Reverse Transfer Capacitance
‐‐
‐‐
1.3
V
DS
= 0V, V
GS
= 0V , f = 1MHz
pF
C
iss
Input Capacitance
‐‐
‐‐
5
V
DS
= 10V, V
GS
= 0V , f = 1MHz
C
db
Drain to Body Capacitance
‐‐
‐‐
5.0
V
DB
= 10V, f = 1MHz
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
MAX
UNITS
CONDITIONS
t
d(on)
Turn On Delay Time
3
ns
V
DD
= 10V, I
D(on)
= 10mA, V
GS(on)
= 10V, V
GS(off)
= 0V, R
G
= 50Ω
t
r
Turn On Rise Time
10
t
d(off)
Turn Off Delay Time
3
t
f
Turn Off Fall Time
15
Click To Buy
Available Packages:
3N170 in TO-72
3N170 in bare die.
TO-72 (Bottom View)
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N170 serviceability may be impaired.
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
* Body tied to case
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
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