RF Small Signal Field-Effect Transistor, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
| Parameter Name | Attribute value |
| Maker | Panasonic |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Reach Compliance Code | unknown |
| Minimum drain-source breakdown voltage | 10 V |
| FET technology | METAL SEMICONDUCTOR |
| JESD-30 code | R-PSSO-F3 |
| Number of terminals | 3 |
| Operating mode | DEPLETION MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| Base Number Matches | 1 |